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This paper presents a TCAD based design technology co-optimization (DTCO) process for 14nm SOI FinFET based SRAM, which employs an enhanced variability-aware compact modeling approach that fully takes process and lithography simulations and their impact on 6T-SRAM layout into account. Realistic double patterned gates and fins and their impacts are taken into account in the development of the variability-aware...
In this paper, we present a simulation flow based on TCAD model calibration against experimental transistor measurement and doping profile reverse engineering. Further the physical astatistical variability simulations at TCAD level are also adjusted to match the statistical measurement. This is folloed up by oxide wear out reliability characterization and modelling. Finally statistical compact model...
This paper presents a hierarchical variability-aware compact model methodology based on a comprehensive simulation study of global process variation and local statistical variability on 20nm bulk planar CMOS. The area dependence of statistical variability is carefully examined in the presence of random discrete dopants; gate line edge roughness; metal gate granularity; and their combination. Hierarchical...
This work present the last development of a statistical reliability aware simulation flow from transistors to circuits. A TCAD calibration methodology based on statistical measurement of a 60nm bulk MOSFET is presented. Statistical compact models of fresh and aged transistors are extracted form large ensembles of TCAD simulations results. Compact models representing intermediate stages of degradation,...
In this paper a variability-aware compact modeling strategy is presented for 20-nm bulk planar technology, taking into account the critical dimension long-range process variation and local statistical variability. Process and device simulations and statistical simulations for a wide range of combinations of L and W are carefully carried out using a design of experiments approach. The variability aware...
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