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High power diode lasers with novel extreme-double-asymmetric epitaxial designs with increased modal confinement in the well Γ achieve high efficiency (50%) and powers (14 W) at high continuous wave heatsink temperature (75°C), attributed to the effective suppression of power saturation mechanisms. Prospects for increased performance via further increased Γ are analyzed.
A review is presented on how diagnostic studies, technological and design improvements and novel device configurations have enabled a more than fourfold improvement in lateral brightness in high power diode lasers, which demonstrate > 4W/mm-mrad.
Diode laser bars with optimized epitaxial designs, long resonators and passivated facets deliver joule-class millisecond pulses (kilowatts of peak power) with the properties needed by advanced high-energy-class solid-state laser systems, at brightness over 3 MW/(cm2sr).
High power diode lasers with low modal gain (∼4 cm−1), predicted to operate with very low filamentation, are shown to operate with near-field modulation depth half that of reference devices (∼12 cm−1). However, beam quality is unaffected.
We present a design study of high power narrow stripe broad area diode lasers at 9xx-nm with contact stripe widths of 20 μm, 30 μm and 50 μm. The devices are deeply implanted with helium (He+) at the edges of the electrical contact, to reduce lateral current spreading and lateral carrier accumulation. All devices operate with a lateral beam parameter product (BPP) below 2 mm x mrad, but differ strongly...
A high output power and a good beam quality are required for the application of diode lasers for direct material processing. One possible way to increase the output power while keeping the beam quality almost constant is spectral beam combining. The required stabilization of the emission wavelengths of the single emitters can be achieved by the monolithic integration of Bragg gratings into the chips,...
GaAs-based edge-emitting diode lasers designed for the near-infrared spectral region usually contain waveguide and cladding layers consisting of AlxGa1−xAs. AlxGa1−xAs-on-GaAs is known to be almost perfectly lattice matched. We have grown AlxGa1−xAsyP1−y/AlxGa1−xAs test samples targeting a partial compensation of the room temperature wafer bow by incorporating up to 4% phosphorus in Al0.85GaAs. The...
We report a novel design and fabrication technique for buried overgrown DFB gratings floating in AlGaAs. In-situ etching enables low oxygen contamination and results in > 60% efficient and 10W reliable high power DFB lasers.
970–980nm broad area (BA) diode lasers with 90–100µm stripe widths are commercially important as pump source for solid state and fiber lasers, as well as for direct applications. Although BA lasers demonstrate high continuous wave (CW) power conversion efficiency ηc > 60% and high reliable powers, Prel > 7W, the emission spectrum is too broad (∼ 4nm) and varies too quickly with temperature (∼...
Optimized 976 nm DFB lasers have peak power conversion efficiency of 58%, peak power of 11 W, linewidth of ~0.4 nm and vertical far-field FWHM 28°. A comparison with Fabry-Pérot lasers to the same design is presented.
A transferred substrate InP DHBT of 0.8 ?m emitter width was developed. The transistors featured high yield and homogeneous device characteristics over the three inch wafer, with an average of ft = 300 GHz ? 3 %SD, fmax = 250 GHz ? 5 %SD at a breakdown voltage of BVceo = 6 V.
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