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E-beam lithography based nanowire catalysts are defined by a two dimensional parameter space, spanned by metallization thickness and resist pinhole diameter. We report that native oxide based selective area nanowire growth allowed reducing the metallization thickness of catalysts down to 1/20 of the resist pinhole diameter, without thermal catalyst splitting; contrary to native oxide free nanowire...
This paper reports the transfer of 100nm-gate length high electron mobility transistors onto plastic flexible substrate. The layers of transistors are grown epitaxially on indium phosphide (InP) bulk substrate. The transfer of these transistors onto polyimide substrate is realized by an adhesive bonding technique. High cut-off frequencies fT =120GHz, fmax=280GHz are demonstrated. These microwave performances...
We demonstrate the 10-Gbit/s direct modulation of optically pumped photonic-crystal (PhC) nanocavity lasers at up to 100°C by using an InGaAlAs multiple-quantum-well (MQW) structure as an active region. The device exhibits an output power exceeding 20 µW and a maximum 3-dB bandwidth of 8.3 GHz at an operating temperature of 100°C. In addition, when the laser is modulated at 10 Gbit/s, low energy costs...
Ohmic I–V characteristics at interface between n-type InAs and n-type Si have been obtained. Single-domain InAs islands (1µm in diameter and 0.5 µm in height) have been grown epitaxially on Si(111) by selective-area MOVPE. After annealing, linear I–V characteristic was observed with excellent reproducibility and the current through the electrode depends on the number of InAs islands beneath the surface...
Ultra-low power and compact optical interconnects can be realized with III–V-based membrane photonic intergrated circuits (PICs) on Si platform. This study focused design and fabrication of the III–V-based passive components of the PICs, especially, a compact 1×2 multimode interference (MMI) splitter with SiO2 buried GaInAsP wire structure. The calculated excess loss was as low as 0.28dB in the optimized...
A review is given on the recent progress in the epitaxy of 1.55 µm QD/QDash laser material and its application in lasers and semiconductor optical amplifiers. By choosing different growth modes by using either As4 or As2, the shape of InAs islands grown on AlGaInAs surfaces can be strongly influenced from dash-like to dot-like geometries. This shape change is accompanied by a strong reduction of the...
For the first time we demonstrate evanescently-coupled modified uni-traveling carrier photodiodes (MUTC PDs) on silicon-on-insulator (SOI) waveguide with an internal responsivity of 0.85 A/W, up to 15 GHz bandwidth, and high RF output power. A novel 2-element MUTC PD array has a saturation current-bandwidth-product of >630 mA*GHz and achieves +9 dBm RF output power at 20 GHz.
We calculated the unstrained and the strained band structures of InAs and carried out Monte Carlo simulation of InGaAs/strained-InAs/InGaAs composite channel high electron mobility transistors (HEMTs) considering 2-dimensional electron gas (2DEG) self-consistent analysis by solving Schrödinger and Poisson equations. With considering the effect of 2DEG, the drain-source current Ids decreases. However,...
A low power on-off mode oscillator is demonstrated by using an InP-based RTD. In order to achieve the low power operation, the NDC (negative differential conductance) characteristic at a low voltage of the RTD is used for RF signal generation. The implemented RTD-based oscillator by using an InP-based RTD/HBT MMIC technology shows low power consumption of 1.3 mW at an oscillation frequency of 5.8...
This paper reports on recent advances on integrated hybrid InP/SOI lasers and transmitters. Based on a molecular wafer bonding technique, we develop hybrid III–V/Si lasers exhibiting new features: narrow III–V waveguide width of less than 3 µm, tapered III–V and silicon waveguides for mode transfer. These new features lead to good laser performances: a lasing threshold as low as 30mA and an output...
InP-based resonant tunneling diodes with symmetrical I/V-characteristics have shown their excellent high frequency performance for THz signal generation. We present a modification with an additional third barrier to create an unsymmetrical I/V-characteristic. With their large current densities and low capacitances these devices are promising candidates for zero bias high frequency envelope detectors...
An overview of analog microwave photonics will be presented. The performance requirements for externally-modulated analog microwave photonic links will be reviewed with specific emphasis placed on modulator efficiency, laser noise, detected photocurrent, and link linearity.
We present here measured DC and RF performance of multi-finger 250nm InP HBTs intended for power amplifier design at high-mm, sub-mm-wave frequencies. The designs presented are in common-emitter and common-base configuration, having 24um periphery. Performance limitations for the PA cell have been identified and mitigated through novel design and layout — they include HBT thermal impedance, RF bandwidths...
We report on the reliability of InP/GaAsSb/InP DHBTs dedicated to very high-speed ICs applications. The devices under tests were fabricated by OMMIC [1]. Accelerated aging tests under thermal stress were previously performed on the same technology and the results are detailed in [2]. In this paper, we present the accelerated aging tests under bias stress performed on 15 DHBTs up to 2000 hours. The...
InP nanopyramidal frusta on InP and InP precoated Si substrates were grown selectively from nano-imprinted circular openings in silicon dioxide mask using a low pressure hydride vapor phase epitaxy reactor. The grown InP nanopyramidal frusta, octagonal in shape, were characterized by Atomic Force Microscopy, Scanning Electron Microscopy and Photoluminescence. The growth is extremely selective and...
The Dual Electroabsorption Modulated Laser (D-EML) is a transmitter technology specially design for dual drive. It is composed of an integrated Distributed Feed Back (DFB) laser and an Electro-Absorption Modulator (EAM) with dual independent modulation access. By controlling independently laser and modulator modulation amplitudes, it's possible to adjust the chirp of this optical source and thus increase...
We present a photonic integrated circuit (PIC) designed to create multiple coherent optical signals for the generation of coherent modulation formats, such as DPSK. A Multimode Interference Coupler (MMI) is monolithically integrated with single facet Slotted Fabry Perot (SFP) lasers at its input and output arms. In this work we show that light from a master SFP laser can be used to injection lock...
We present a tunable laser based on partially reflective slots etched into the active ridge of a laser the output of which is monolithically coupled into a lower waveguide using a tapered coupler. The laser demonstrates a tuning range of 2.8 THz covering 8 channels separated by 400 GHz. The coupling efficiency to the lower waveguide is up to 90%. This approach requires no epitaxial re-growth making...
To decrease the operational power consumption of a laser module, a lateral-grating-assisted lateral co-directional coupler (LGLC) tunable laser with a high-mesa buried heterostructure (BH) was fabricated. The LGLC laser demonstrated successful tunable laser operation in the C-band wavelength range of 37 nm with 40 mA injection current into an LGLC filter at 50°C.
One of the promising candidates to solve a problem of a performance limitation of LSI is replacing electrical global wirings by on chip optical interconnections. We proposed and realized lateral-current-injection (LCI) type membrane DFB lasers for this purpose. In this paper, we report a new type LCI membrane DFB laser by introducing Be-doped GaInAs contact layer to the initial wafer structure so...
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