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In this paper, by using comprehensive statistical device simulation methodology, we investigate the effect of Statistical variability and reliability on the state of the art 14nm FinFET technology on important device figures of merit. Important sources of statistical variability have been considered in all simulation of fresh devices and various degradation levels are included in the reliability simulation...
Embedded non-volatile memory (NVM) introduces additional thermal processes to a logic process flow and the impact from this extra thermal budget becomes more considerable with continued device scaling. This paper investigates the mechanism of SRAM VMIN degradation in a 40nm embedded NVM process and provides a solution to address the degradation caused. Failure analysis shows enlarged poly grain size...
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