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In this letter, a novel process for recessed-gate AlGaN/GaN high-electron-mobility transistors using an Al2O3/SiNx dielectric has been developed. The Al2O3/SiNx dielectric bilayer was used as a recess etch-mask for short-gate-footprint definition. Recessed-gate devices with a gate length of 70 nm have been fabricated on a molecular-beam-epitaxy-grown layer structure using this process. After the removal...
For the first time, the performance of uniaxial- and biaxial- strained InxGa1-xAs NMOS double gate FETs (DGFET) with (111) and (001) orientations are thoroughly investigated under ballistic transport, taking into account non-parabolic full band structure, quantum effects, band-to-band tunneling (BTBT) and short-channel effects (SCE). The real and complex band structures for different composition,...
InxGa1-xAs is a very promising candidate for future NFETs. The performance tradeoffs in biaxial-strained In0.75Ga0.25As and GaAs NMOS DGFETs have been thoroughly investigated under ballistic transport, taking in to account non-parabolic full band structure, quantum effects, BTBT and SCE. The real and complex band structures for (001)/(111) orientations and biaxial tensile/compressive strains are calculated...
Due to their extremely high electron mobility (mu), III-V materials are being investigated as channel materials for high performance NMOS. Although their small transport mass leads to high injection velocity (vinj), they have a low density of states (DOS) in the Gamma-valley, tending to reduce the inversion charge (Qinv) and hence reduce drive current. Furthermore, the direct band gaps of III-V materials...
Based on the complex bandstructure obtained by local empirical pseudopotential method (LEPM), we have developed a band to band tunneling model (BTBT), which captures band structure information, all possible transitions between different valleys, energy quantization and quantized density of states. Theoretical model is verified by experimental study on tunnel diodes on various semiconductors. BTBT...
Channel materials with high mobility are needed for future nodes to meet the ITRS requirements of MOSFETs. In this work we assess the performance of Si, Ge, and III-V materials like GaAs, InAs and InSb which may perform better than even very highly strained-Si
The performance limits of ultra-thin body double-gated (DG) III-V channel MOSFETs are presented in this paper. An analytical ballistic model including all the valleys (Gamma-, X- and L-), was used to simulate the source to drain current. The band-to-band tunneling (BTBT) limited off currents, including both the direct and the indirect components, were simulated using TAURUSTM. Our results show that...
The performance limits of ultra-thin body double-gated (DG) III-V channel MOSFETs are presented in this paper. An analytical ballistic model including all the valleys (Gamma-, X- and L-), was used to simulate the source to drain current. The band-to-band tunneling (BTBT) limited off currents, including both the direct and the indirect components, were simulated using TAURUStrade. Our results show...
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