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In this study, we compared the basic switching behaviors of HfO2, Al2O3 and HfAlOx (Hf:Al=9:1) based RRAM with Ti top electrode by setting various compliance currents (1mA, 5mA, 10mA, 15mA). The resistance ratio of HfO2 based RRAM (20 → 320) increases with compliance current whereas it drops not obviously for Al2O3 based RRAM (85→54). HfAlOx (Hf:Al=9:1)) based one has the best resistance ratio (300–440)...
Four HfAlO based resistive random access memory (RRAM) devices with different HfO2 percentage (0%, 10%, 90% and 100%) were fabricated using atomic layer deposition (ALD). Three types of electroforming processes were observed with 1mA current compliance (CC), including initial high resistance state (HRS), initial medium resistance state (MRS) and initial low resistance state (LRS). The modulation of...
HfO2 gate dielectric is fabricated by atomic layer deposition on an n-type germanium (Ge) substrate to form p-type Ge MOS capacitors. Three solution-based chemical treatments of the Ge surface using propanethiol, octanethiol and (NH4)2S solutions respectively as well as post-metallization annealing are investigated to improve the interface quality of HfO2 gate dielectric on the Ge substrate. Experimental...
Anomalous behaviors in capacitance-voltage (CV) characteristics are observed on MOS devices with ZrO2 and HfO2 oxides. The relative positions of forward and reverse CV traces measured by pulse technique are opposite to those obtained by LCR meter. This unusual phenomenon cannot be consistently explained by trapping/de-trapping of charges. A hypothesis related to interface dipoles is proposed to provide...
Cerium oxide (CeO2) thin films used liquid injection atomic layer deposition (ALD) for deposition and ALD procedures were run at substrate temperatures of 150 °C, 200 °C, 250 °C, 300 °C and 350 °C, respectively. CeO2 were grown on n-Si(100) wafers. Variations in the grain sizes of the samples are governed by the deposition temperature and have been estimated using Scherrer analysis of the X-ray diffraction...
Frequency dispersion in lanthanide-based ternary oxides is often observed in capacitance-voltage (C-V) measurements. The frequency dependence of the dielectric constant (k-value), that is the intrinsic frequency dispersion (dielectric relaxation), could not be assessed before suppressing the effects of extrinsic frequency dispersion, such as the effects of the lossy interfacial layer (between the...
The dielectric relaxation in the high-k materials, which would cause the metal-oxide-semiconductor field-effect transistor deterioration, is able to be fitted by several models. A novel model is proposed to simplify the original Kohlrausch-Williams-Watts (KWW) model. The proposed model has an analytical expression respectively in both high and low frequency domain. A critical comparison is made between...
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