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For the first time, 20nm DRAM has been developed and fabricated successfully without extreme ultraviolet (EUV) lithography using the honeycomb structure (HCS) and the air-spacer technology. The cell capacitance (Cs) can be increased by 21% at the same cell size using a novel low-cost HCS technology with one argon fluoride immersion (ArF-i) lithography layer. The parasitic bit-line (BL) capacitance...
High-power wireless power transfer system (WPT) with high voltage and/or high current can be very dangerous to both engineers and consumers because the probability of explosion is much higher than that of low-power WPT system. Therefore, safety and reliability issues of a coil module in WPT systems should be verified before the actual experimental test. In this paper, a coil module verification process...
This paper proposes a control strategy for grid-interactive Power Conditioning System (PCS) with feedforward control method based on active frequency detection. PCS should supply the power to critical loads continuously regardless of grid condition. Hence, PCS detects grid condition fast and transfers between two operation modes smoothly. In addition, it also important to detect its operating condition...
This paper presents a high-voltage driver in nanometer-scale, low-voltage SOI CMOS technology well beyond the voltage limits of standard devices. The drive level is near the voltage-tolerance limit of the body insulator. A novel, bidirectional, switched-capacitor output stage that combines both voltage-conversion and pulse-drive is introduced. The two-level driver is implemented in 45-nm SOI CMOS...
In this study, a three dimensional multi-helix inductor design with a size smaller than 10mm×10mm is proposed for package-level wireless power transfer (WPT) using magnetic resonance, and the performance of an inductor-to-inductor voltage transfer ratio (VTR) of 70.1 % is presented. The effect of the power distribution network (PDN) load impedance on the VTR is studied and verified through measurement...
This paper describes the design of a 48 kJ/s high-voltage capacitor charging power supply (CCPS), focusing on its efficiency, power density, and reliability. On the basis of a series-parallel resonant converter (SPRC) that provides high efficiency and high power density owing to its soft-switching, the design of the CCPS is explained in detail, including its input filter, resonant tank parameters,...
Multiferroic (Bi1−xEux)(Fe1−xMnx)O3 (BEFM-x, x=0.00, 0.02, 0.04, 0.06, 0.08, and 0.10) thin films were prepared on Pt(111)/Ti/SiO2/Si(100) substrates by using a chemical solution deposition method. Compared to the pure BiFeO3 thin film, improved ferroelectric property and reduced leakage current density were observed in the co-doped BEFM-x thin films. Among them, the BEFM-0.08 thin film capacitor...
A new time-domain approach of locating transitory, sub-cycle faults is introduced with a detailed formula derivation of the fault distance calculation for a single line-to-ground fault in the circuit of a substation, utilizing only the discrete voltage and current samples obtained at the substation. The formula is obtained from an equivalent circuit of the faulted circuit with voltage injection and...
An area efficient scheme for WCDAC (Weighted Capacitor Digital-to-Analog Converter) is proposed. This new architecture adopts an extensive charge-sharing scheme to enhance the overall converting resolution without additional increase of the capacitor distribution ratio. The validity of the approach is clearly proved by the analytic method and simulations.
Advancement in semiconductor technologies including CMOS and SiGe is enabling the commercialisation of devices that have increased switching speed, reduced power supply and increased circuit complexity. Proliferation of high-speed systems in both digital and mixed-signal applications is also driving the need for advanced noise suppression techniques. This paper describes a novel approach of using...
Floating gate interference resulting from capacitive coupling through parasitic capacitors surrounding the floating gate degrades the cell characteristics such as current, speed and cell Vth distribution. For the first time, we have introduced the cell characteristics improved using low-k dielectric of gate spacer such as oxide and air gap in 1Gb NAND flash memory
Effects of residual surface nitrogen, remaining after stripping off oxynitrides (N/sub 2/O-grown or NH/sub 3/-nitrided oxides), on the quality of the regrown gate oxides are studied. Residual surface nitrogen is observed to reduce the breakdown field and degrade the TDDB characteristics of the subsequently grown gate oxides. Results show that oxide regrowth in N/sub 2/O, rather than O/sub 2/, can...
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