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This paper presents a toolbox for the automation of the electrical characterization of CMOS transistors. The developed software provides a user-friendly interface to carry out different tests to evaluate time-zero (i.e., process) and time-dependent variability in CMOS devices. Also, the software incorporates a post-processing capability that allows users to visualize the data. Moreover, without loss...
Reliability has become a critical challenge in integrated circuit design in today's CMOS technologies. Aging problems have been added to the well-known issues due to spatial variations that are caused by imperfections in the fabrication process. In this sense, transistor wear-out phenomena such as Bias Temperature Instability (BTI) and Hot Carriers (HC) cause a time-dependent variability that is added...
In this work an ultrafast characterization technique has been developed with the aim of studying the NBTI degradation in pMOS transistors by acquiring the threshold voltage (Vth) shift in very short relaxation times after the electrical stress removal. The NBTI degradation has been studied as a function of the stress and relaxation time. The observed BTI relaxation has been explained in the framework...
Interface traps can introduce random variations in the drain current of MOSFETs, becoming a source of device variability. In this work, 2D and 3D TCAD simulations of devices with channel length in the decananometer range are carried out to analyze the impact of their spatial distribution on the drift of the threshold voltage. 2D simulations show that traps located close to the center of the channel...
In this paper a new approach to implement adaptive hardware (AH) based on memFETs crossbar structure is presented. We report a novel computing hardware principle called Shape-Shifting Digital Hardware (SSDH) oriented to execute task requirements in a dynamic, flexible, efficient and adaptive way. In this technique not only the logic functions are modifiable (as in the case of Field Programmable Gate...
In this work an equivalent circuit for the recoverable component of BTI is proposed. The circuit, based on diodes and capacitors for easy incorporation into circuit simulations, is able to reproduce correctly the stress, relaxation, voltage, frequency and duty factor dependences of the BTI-recovery previously reported. In addition, the model characteristics allow the extrapolation of BTI effects to...
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