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With in the process temperature limit of less than 400 °C for via last technology, a simple method to improve the barrier ability of Ti layer in through Si via (TSV) has been studied. After annealing the TSV structures in vacuum at temperatures up to 400 °C, we did observe a tremendous improvement in leak current characteristics for SiO2 dielectric. It was found that the self-formed TiSix at the interface...
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