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Diffusion of atoms across the boundary between two bonding layers is the key for achieving excellent thermocompression Wafer on Wafer bonding. In this paper, we demonstrate a novel mechanism to increase the diffusion across the bonding interface and also shows the CMOS in-line process flow compatible Sub 100 °C Cu–Cu bonding which is devoid of Cu surface treatment prior to bonding. The stress in sputtered...
Enhanced Cu diffusion, Cu surface passivation, and surface smoothness at the bonding interface are the key requirements for high quality Copper-Copper (Cu-Cu) thermocompression bonding. In our previous work, we have demonstrated the usage of optimized Manganin metal alloy of 3 nm not only helps in passivating the Cu surface even at high temperature (<300°C) but also reduces the surface roughness...
In this paper, we proposed a novel stacked layer of liner structure around the TSV's and verified its performance on noise coupling between them. The performance of proposed structure with different materials and thickness were optimized and verified with respect to the noise coupling reduction. The obtained results show almost equal noise reduction performance of around 40% with the Teflon-Cu-Teflon...
In this paper, performance of noise coupling is studied using conventional SiO2 liner and Teflon AF1600 liner over different TSV structures (using only liner and liner surrounded by p+ guard ring). We have taken an optimized liner thickness of 0.15 μm and remaining metal filler as Cu for the entire simulation purpose. Our result confirms significant improvement in noise coupling using liners made...
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