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Nitride technologies are proposing a large variety of active devices to address high-power modules, but also robust low-noise receivers at high frequencies. High Electron Mobility Transistors (HEMT) are essentially developed on AlGaN/GaN heterostructure, but InAlN/GaN alternative seems very promising due to lattice matched layers (using 17% of In content) at the interface between layers where the...
Low noise amplifiers in receivers are usually addressed by III-V (narrow bandgap) technologies: but when the receivers are subject to EM exposure or jamming, the need for protection devices before the active low noise amplifier (LNA) degrades the overall noise figure, and decreases the effective radio link budget. This vulnerability of the LNA can be overcome thanks to robust designs or robust technologies...
From the first developments of Nitride technologies using AlGaN/GaN heterostructures for designing high power, high frequency HEMT devices, we now assist to the emergence of new declination with InAlN/GaN heterostructures. Considering the expected better interface quality of this last technology as a consequence of the better lattice match, and better electrical properties, these HEMT devices attract...
The microwave noise parameters measured on AlInN/GaN HEMTs devices with different gate length values are presented in this paper. 0.15-μm HEMTs achieve a maximum current density of 700 mA/mm at VGs = 0 V and a measured extrinsic transconductance of 350 mS/mm. The current gain cutoff frequency and the maximum oscillation frequency are 40 GHz and 70 GHz, respectively. At 10 (20) GHz, the device exhibits...
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