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In this paper, we aim to present an overview of a surface-potential (SP) based model named “Advanced Spice Model for High Electron Mobility Transistor” (ASM-HEMT) for AlGaN/GaN HEMTs. This model is presently under consideration in the phase-III of industry standardization by the Compact Model Coalition (CMC). SP of GaN HEMT is obtained by solving Schrodinger and Poisson equations in the triangular...
In this paper, we aim to present the Advances Spice Model for High Electron Mobility Transistors (ASM-HEMT). The model is currently being considered in the second phase of industry standardization by the Compact Model Coalition (CMC). The presented physical model is surface potential based and is computationally efficient by virtue of being completely analytical. It includes velocity saturation effects,...
In this paper, the gate current in AlGaN/GaN high-electron mobility transistors is modeled analytically in a surface potential-based compact model. Thermionic emission and Poole–Frenkel emission are two dominant mechanisms for the gate current in the forward and reverse-bias regions, respectively. In addition, a trap-assisted tunneling component, which is important at low reverse bias, is also added...
In this work a surface potential based compact model is presented for GaN material based High Electron Mobility Transistors. We have developed model for charges, drain current and gd (output conductance) which is surface potential based and physically accurate. Our model has shown excellent agreement with experimental data for drain current and gd. This model is capable of showing correct physical...
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