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In this paper, the gate current in AlGaN/GaN high-electron mobility transistors is modeled analytically in a surface potential-based compact model. Thermionic emission and Poole–Frenkel emission are two dominant mechanisms for the gate current in the forward and reverse-bias regions, respectively. In addition, a trap-assisted tunneling component, which is important at low reverse bias, is also added...
In this work a surface potential based compact model is presented for GaN material based High Electron Mobility Transistors. We have developed model for charges, drain current and gd (output conductance) which is surface potential based and physically accurate. Our model has shown excellent agreement with experimental data for drain current and gd. This model is capable of showing correct physical...
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