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New device architectures and materials are being introduced to develop 10 and 7 nm node manufacturing processes. In addition, the increasing complexity of multiple patterning adds significant yield challenges. The critical metrology challenges for yield assurance include defect control, control of critical dimension and critical dimension uniformity, and pattern placement control. To support the industry...
A new SEM technology, Advantest's Wafer MVM-SEM E3310, is becoming available that allows quantitative, image-based 3D profile metrology of nanoscale features. CD-AFM is generally employed for 3D profile information, but this technique has its own limitations for 1Xnm node production due to tip size constraints in the tightest spaces, and due to finite tip lifetime which can influence measurement stability...
Successful in-line metrology is imperative for a fab to achieve profitable production yields. Full functionality and high circuit speed are achieved only through control of defectivity and tight distributions of feature sizes. In-line monitoring of applicable metrics is key to ensuring success and is also used to fine-tune production processes for improved yield and circuit speed. Metrology has now...
This paper focuses on ArF and iArF photoresist shrinkage. We evaluate the shrinkage magnitude on both R&D resists and mature resists as a function of chemical formulation, lithographic sensitivity, SEM beam condition, and feature size. The results lead to a much improved understanding of the mechanics of the shrinkage phenomenon, with many implications for SEM metrology as the industry moves to...
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