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In this paper, a two-stage design of a parallel-RC feedback low-power low-noise amplifier (LNA) that can be used in long-range (LoRa) applications is presented. The first stage involes a common-source amplifier intended to decouple the noise figure (NF). To obtain broadband input matching, a parallel resistance-capacitance shunt feedback is proposed. Furthermore, a source inductance is used to boost...
A 0.9-GHz fully integrated class-E two-stage power amplifier (PA) for Long Range Wide Area Networks (LoRaWANs) is fabricated using a TSMC 0.18-μm process. This PA employs multiple methods to realize a high efficiency. The injection-locking technique is used to reduce the input driving power. The first stage is utilized as the driver stage to improve the efficiency and decrease the number of inductors...
This paper presents a 900 M low-power, low-noise receiver frontend implemented using TSMC 0.18-μm CMOS technology. The inductorless frontend comprises a low-noise amplifier (LNA) using bulk injection, a mixer, and an active balun operating in the subthreshold region. The front end achieves a conversion gain of 33.7 dB, and a 2.9 dB single sideband noise figure. The chip consumes 5.9 mA from a 0.9-V...
This paper presents a CMOS high linearity power amplifier for LTE application. We use inverter circuits and t second harmonic control to improve the linearity. This circuit will be processed with TSMC 0.18 µm technology. The simulation result shows that the circuit exhibited a power gain of 25.9 dB, an input return loss less than - 20.2/20.9dB, the PAE is about 35%/31.2% and the output power is about...
This paper presents a 0.5-3.5GHz wideband CMOS low noise amplifier (LNA) for LTE application. The LNA design is based on a common source (CS) cascade amplifier with resistive feedback that is used to do input matching and reduce the noise figure. Source follower and LC series resonances are used to do output matching. The LNA achieves the gain of 17dB ∼ 22dB, a noise figure (NF) of 2.23 ∼ 2.68 dB...
A 2.6 GHz cascode CMOS power amplifier with the derivative superposition (DS) method and the second harmonic control for LTE application is fabricated in TSMC 1P6M 0.18 µm standard CMOS process. The DS method uses two transistors connected in parallel and biased in low and high inversions to compensate for the gm3 and achieves the greater third-order intercept point (IIP3). The second harmonic control...
This paper presents a 1.8GHz dual channel switched beam-former with active inductors phase shifters. Utilize active inductors and capacities to achieve design of Hybrid phase shifters. Phase shifter loss of −3.85 dB and phase difference of 85 degree. The architecture of active inductor used gyrator topology [2][6] which uses few of transistors to reach the performance of inductive. Quality factor...
This paper presents a dual-band power amplifier (PA) for LTE applications at 1.8 GHz and 2.6GHz in TSMC 0.18 μm CMOS technology. The proposed PA consists of a two-stage cascode structure comprising a driver stage and power stage. The driver stage employs a RC feedback and resistive feedback. The feedback technique is used to improve the bandwidth. The power stage employs a diode linearizer help to...
A fully integrated 1.8 GHz CMOS power amplifier is presented in this paper. The proposed power amplifier consists of a three-stage cascade structure comprising a driver stage, a pre-distortion stage, and a power stage. The pre-distortion stage involves the use of two diode connected MOSFETs as a non-linearity generator to expand the 1dB compression point (P1dB) and enhance the power added efficiency...
This paper presents a dual channel switched RF-front-end beamformer to solve the severe interference problem that affects the LTE small-cell base stations. The beamformer system uses new type of hybrid phase shifter that situated at a later stage of the low-noise amplifier. The proposed system has four cases, and each can generate two opposite, non-overlapping coverage radio beams. Thus, the system...
This paper proposes a RF front-end switched beamforming transmitter for application in LTE small cell base stations. The four element phased array circuit includes passive RC ninety degrees phase shifters, switches and pre-distortion power amplifiers. Each power amplifier can deliver an output power of 23 dBm and a power gain of 26 dB. The proposed transmitter has eight distinct beam directions by...
A fully integrated power amplifier using 0.18 um CMOS process is presented. The proposed design utilizes an on-chip transmission line transformer as a power combiner and a matching network. With 3.5 V supply, the dc consumption is 179 mA. The simulated results show that the linear gain is 12 dB at 1.8 GHz, and 1-dB gain-compressed output power is 27 dBm, while the power added efficiency is 24%. The...
The proposed mixer was fabricated in TSMC 1P6M 0.18 um CMOS process. This mixer is intended for application in LTE small cell base station. The circuit architecture is based on the Gilbert mixer. The folded technique allowed the bias current of the trans-conductance stage and that of the switching stage to be different. A new type of inverter amplifier with enhanced derivative superposition method...
The purpose of this study was to fabricate a mixer based on the Gilbert cell mixer using the 0.18 µm 1P6M standard CMOS process. The primary target of this mixer was long-term evolution (LTE) small-cell base stations; thus, high linearity was essential. This up-conversion mixer can convert a 100-MHz intermediate frequency into a higher 1.8-GHz radio frequency for wireless applications. A high-linearity...
This study presents a 3–10 GHz ultra-wideband low noise amplifier (UWB LNA) with an interstage technique, featuring low power consumption, high gain (S21), and a low noise figure (NF). The low power consumption UWB LNA is designed using standard 0.18µm CMOS technology. Using the interstage technique (current reused topology with a peaking inductor) achieves low power consumption. The LNA achieves...
This paper presents a switchable single/double-band, low noise amplifier (LNA) for WLAN and WiMax systems. The LNA uses wideband bandpass filters and a capacitor of reduced high frequency signals at input matching networks. At the inter stage, using a series resonator increases gain at high frequency. To obtain a small chip size, this study used two center tapped inductors and a switch. This study...
A single inductor matching network that carried low noise is designed to achieve the input wideband matching. This way has lower complexity that reduces chip area and holds the good reflection coefficient. Besides, the current reuse technique was used to achieve low power consumption. The design is simulated by Taiwan Semiconductor Manufacturing Company (TSMC) 0.18μm RF CMOS process. Through a 1V/5...
This paper presents a 2 - 13GHz low-voltage broadband down-conversion mixer with an active balun for UWB radio. The mixer with an active balun is fabricated in the 0.18 μm 1P6M standard CMOS process. The mixer with active balun consumes 15.2 mW from a 1.2 V supply. This mixer was achieved by using a folded-mixer and a peaking inductor technique. This technique can double the 3 dB bandwidth...
This study presents a 3-10GHz ultra-wideband low-noise amplifier (UWB LNA) with CMOS distributed amplification,(DA) featuring low power consumption, flat response, high gain (S21), and low noise figure (NF). The DA UWB LNA is designed with standard 0.18μm CMOS technology. Low power consumption, flat and high gain (S21) were achieved through the use of a proposed two stage DA, and current-reused technique...
A single inductor matching network that carried low noise is designed to achieve the input wideband matching. This way has lower complexity that reduces chip area and holds the good reflection coefficient. Besides, the current reuse technique was used to achieve low power consumption. The design is simulated by Taiwan Semiconductor Manufacturing Company (TSMC) 0.18μm RF CMOS process. Through a 1V/5...
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