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Deep insights into the Off-State Stress (OSS) degradation mechanism on p-MOSFETs with High-K/Metal Gate technology are presented in this paper. Large subthreshold slope degradation, or positive Vth shift is observed in high, or low Vth devices, where both phenomena impact the off current degradation. The OSS degradation mechanism in pMOS is generated by (1) hot carrier generation close to the drain...
In this work we have investigated the impact of Off State Stress (OSS) on nMOSFETs in High-K/Metal Gate (HKMG) technology. Although in standard poly-SiO2/SiON devices the impact of OSS is relatively limited and causes an increase in VTH, in the case of HKMG larger degradation is observed, with negative VTH shift. A significant increase of the device Off state leakage is observed, causing a serious...
In this paper, we illustrate how high-resolution 2-D carrier profiles from scanning spreading resistance microscopy (SSRM) can be used to predict and understand device performance of dynamic random access memory peripheral transistors with high-k metal gate and ultrashallow junctions. In an earlier study on high-speed complementary metal–oxide–semiconductor logic, the 2-D carrier profiles from SSRM...
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