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We introduce a 0.18µm SiGe BiCMOS technology that is designed for front-end IC (FEIC) integration on a single chip. This technology employs a high-resistivity substrate and offers high-performance RF switch and low-noise amplifier (LNA) devices alongside SiGe HBTs optimized for WiFi and cellular power amplifiers (PAs). An optional through-silicon via (TSV) is also available for a low-inductance ground...
A new circuit model based on time-domain characterization of Impact Ionization Avalanche Transit-Time (IMPATT) devices is proposed. The model introduces a new 3rd order low-pass filter to accurately model the delay response of carrier drift inside the drift region, thereby capturing the dispersion caused by carrier diffusion. Moreover, non-stationary effects inside avalanche region as well as the...
The authors present a study of SiGe HBTs with FT>200GHz on an SOI substrate for the first time. The devices built on SOI exhibit a degradation of approximately 7 Ghz in Ft as compared with bulk devices while Fmax remains near 280 GHz. As expected, Ccs is reduced by ∼ 40%. A loss of about 0.75 V in safe operating area is observed for the HBTs built on SOI, but approximately half of this can be regained...
In this paper we examine the SiGe HBT's current-voltage characteristics where Jc is several times the Kirk current density JHC = qNepi vsat. We analyze the QS characteristics by comparing the NPN's with different intrinsic collector doping profiles fabricated on the same wafer. Data from NPN's made from various thicknesses and concentrations of the epi-layer are also presented
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