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The standard ESD protection schemes are not very reliable for negative charge pump used in Class G power amplifiers. This work presents a novel ESD protection scheme using internal charge pump switches as ESD clamps. Transmission line pulsing (TLP) measurements show that an elevated level of ESD protection can be achieved with this scheme.
This paper presents an on-chip protection against IEC 61000–4–2 level discharges for Audio power amplifiers. It is shown that robust system level ESD protection can be achieved using on-chip circuits. A testing methodology to check design robustness at various phases of the design is also presented.
The standard ESD protection schemes are not very reliable for negative charge pump used in Class G Power Amplifiers. This work presents a novel ESD protection scheme using internal charge pump switches as ESD clamps. TLP measurements show that elevated level of ESD protection can be achieved with this scheme.
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