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This paper presents a new topology for a triband Doherty power amplifier (DPA). It utilizes a triband impedance inverter, realized using a T-network, to synthesize a triband power combining network. This approach enables Doherty load modulation around three separate operating frequencies with suitable fractional bandwidths. For proof of concept, a demonstration DPA operating at 1200, 1800, and 2700...
In this paper, a design architecture of a compact, concurrent quadband Doherty Power Amplifier (DPA) is proposed that relies on a new quadband band-pass filter comprising the input matching network. The filter — based on Quarter Wave Open Stubs (QWOS) at the desired operation frequencies — is embedded within the output arms of a wideband power divider to create the targeted four arbitrary frequencies...
In this paper, a miniaturized, ultra-wideband, dual-section, two-way offset power divider, covering the frequency range from 0.6 to 6 GHz, with reflection cancellation and enhanced isolation, is presented. The divider small form factor is achieved through the use of a π-structure that replaces the λ/4 transmission lines in each of the divider's sections. The dimensions of the open stubs forming this...
In this paper, a new measure that accounts for the nonlinearity of radio frequency power amplifiers RFPAs is defined. The new measure — referred to herein as the Desensitization Point — is used to characterize the nonlinear behaviour of RFPAs when two in-band unequal tones are applied to the amplifier input; a strong (blocker) signal features more amplifier gain as opposed to a weak nearby signal,...
In this paper, a miniaturized wideband two-way Wilkinson divider operating from 0.2 to 4.6-GHz is demonstrated. The proposed miniaturization concept depends on the use of artificial transmission lines (ATLs), to replace the conventional impedance transformers, in order to decrease the phase velocity of the propagating waves and accordingly achieving higher electric lengths using smaller physical dimensions...
In this paper, a quad-band, multi-standard, concurrent, low noise amplifier operating in the 0.9/1.8/2.45/3.5 GHz bands is presented. The amplifier design is based on an ultra low noise PHEMT transistor connected in the common source topology with inductive degeneration. The input matching network is based on a three-section, dual-band transformer. A feedback capacitor is inserted between the gate...
In this paper, a design for a quadband linear/efficient class-AB power amplifier, with an output power exceeding 10-watts in all four bands is presented. The designed power amplifier - based on a GaN HEMT- provides a power added efficiency over 47% in all four bands. Source/load-pull simulations are used for optimum matching at each band; quadband stub-based matching is used for input matching whilst...
In this paper, a low-noise CMOS readout front end for biopotential acquisition applications is presented. The proposed circuit, implemented using 130 nm standard CMOS process, has a thermal noise floor of 10 nV/√Hz, a corner frequency of 300 mHz, and dissipates 3.2µW of power when powered using a 1 V supply. The designed circuit occupies a die area of 0.007mm2 and thus renders itself as an excellent...
This paper presents a design for a highly-linear power amplifier - based on GaN HEMT- with an output power excess of 9W, and an ultra-broad bandwidth extending from 0.3 to 3.7 GHz (170%). Different design techniques are adopted to achieve a flat power gain of 9.5 ± 1 dB over the entire operating bandwidth. Sixth and fifth order low pass matching circuits are designed for input and output matching,...
In this paper, a low-power, low-noise chopper stabilized CMOS differential difference instrumentation amplifier (CHDDA) for portable biopotential acquisition applications is presented. The proposed 130 nm CMOS chopper stabilized amplifier has 3.2μW power dissipation, thermal noise floor of 10 nV/rtHz and corner frequency in the vicinity of 10 Hz with 1 V supply voltage which performs adequately well...
This paper presents a design for a highly-linear power amplifier — based on GaN HEMT- with an output power of more than 10W, and an ultra-broadband bandwidth extending from 0.8 to 4.2 GHz (136%). Different design techniques are adopted to achieve a flat power gain of 10 ± 1.5 dB over the entire operating bandwidth. Eighth order low pass filter matching circuits are designed for input and output matching...
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