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White spots reduction by the ultimate proximity metal-gettering technology for CMOS image sensors is demonstrated. Metal contaminants in photodiodes (PDs) causing white spots can be captured by carbon complexes, as metal gettering sites, formed underneath contact areas in CMOS image sensors without any layout area penalty. High density carbon complexes take advantage of the ultimate proximity to PDs...
The characteristics of leakage current observed in the pixels of pinned photodiode CMOS image sensor with negative transfer-gate bias operation are investigated, taking metal contamination into account. Simulation results show that interface states between insulator and the pinned layer in the vicinity of transfer gate, acting as hole traps, are responsible for negative transfer-gate bias dependence...
Nickel silicide is widely applied to forming the electrodes of gates, sources, and drains in advanced complementary metal-oxide-semiconductor field-effect transistors (CMOSs) [1]–[3]. Nickel mono-silicide (NiSi) is usually fabricated in the devices because the NiSi phase has the lowest resistivity of all the phases of nickel silicides. NiSi is prone to transforming into nickel di-silicide (NiSi2)...
We applied partial conversion (PC) with a low metal-consumption ratio (MCR) as the initial silicidation, fabricating uniform and low-resistive Ni-Pt silicide regardless of the device patterns across a wafer. The key to PC in Ni-Pt silicidation was leaving the Ni-Pt alloy on the silicide after the initial silicidation. This process enriched the Pt of the Ni-Pt silicide because the Pt was supplied from...
To create a nickel monosilicide (NiSi) film with superior electrical properties, two-step rapid thermal annealing (RTA) was optimized. Using in-situ chemical dry cleaning and increasing initial RTA temperature makes it possible to macroscopically transform nickel into NiSi without causing oxygen-contamination problems. Nevertheless, the Ni2Si remaining on the top surface of the NiSi degrades its electrical...
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