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We report preliminary results on a multiwavelength (8 channels) transmitter integrated on a generic InP integration platform. The circuit is made by 8 tunable directly modulated DFB lasers, 8 monitor photodetectors and MMI couplers.
A silicon photonics integrated reconfigurable nested Mach-Zehnder interferometer including tunable splitters and four independent phase modulators has been designed and fabricated. Thanks to the custom architecture, 16-QAM modulation is achieved with simple binary driving signals and successfully detected up to 20Gbaud with BER below the FEC level.
A photonic integrated circuit capable of recombining any incoming state of polarization into a single TE Silicon waveguide was demonstrated, allowing optical communication systems to be transparent to polarization issues.
We demonstrate an InP-integrated WDM-DPSK demodulator encompassing a semiconductor optical preamplifier. The demodulator is based on ad-hoc optical filtering by an arrayed waveguide grating. Preliminary experimental results demonstrating operation at 56 Gb/s are reported.
We demonstrate an ultra compact integrated Silicon receiver for DQPSK signals based on two tunable SOI microring resonators and four Germanium photodetectors. The device operation was characterized on a range extending from 7.5 to over 15 Gbaud.
The evaluation of the Residual Added Signal Crosstalk in a micro-ring based silicon photonic integrated ROADM is presented. The origin of the cross talk is mainly due to reflections at the grating coupler interfaces.
This paper describes a robust process for the fabrication of highly doped Silicon-On-Insulator nanowires and devices. The process uses electron-beam lithography, lowdamage dry etch and controlled thermal oxidation to deliver consistent, reproducible and reliably nanowires of nominal widths from 100 nm down to sub-5 nm etched to a depth of 55 nm in silicon. Initial electrical measurements indicate...
This summary describes the development of silicon waveguide photodetectors formed via the controlled introduction of deep-levels to induce sensitivity at wavelengths around 1550nm. This approach is monolithic and CMOS compatible.
Visible light trimming of As2S3-assisted optical waveguides is exploited to compensate for fabrication tolerances and to demonstrate permanent reconfiguration of photonic integrated circuits. Applications to ring-resonator filters and variable delay lines are presented.
Device structures in high refractive index materials, notably semiconductors such as silicon, will form the basis for high-density integrated photonics. Nanometre-scale structuring - in conjunction with photonic crystal, photonic wire and plasmonic/metamaterial principles - will be required in order to realise the full potential for a variety of applications.
We describe the fabrication and characterization of a silicon waveguide resonant photodetector compatible with the optical-to-electrical conversion of wavelengths at, or around, 1550 nm. Sub-band responsivity is provided through the introduction of defects via inert self-implantation and subsequent annealing. The detector is located within a 20- m radius silicon microring resonator. An 18-dB resonant...
The physical mechanisms that can be used as general recipes for designing high-quality factor (Q) photonic crystal cavities with small mode volumes are described within a Fabry-Perot-like approach.
By using the optical near-field microscopy technique coupled to microphotoluminescence or transmittance experiments, we investigate the optical near-field properties of photonic crystal nanocavities and evidence the near-field probe ability to manipulate their resonances.
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