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In this paper, we proposed a simulation approach for studying the random dopant fluctuation (RDF) effects in the nanoscale MOSFETs using only the TCAD tools. We use this approach to simulate the RDF effects in the 20-nm gate-length bulk MOSFETs, silicon-on-insulator (SOI) single-gate (SG) and triple-gate (TG) FinFETs for demonstration. This approach utilizes the stochastic nature of the Monte Carlo...
Quantum confinement in nanoscale MOSFETs based on silicon-on-insulator FinFET architecture will affect the effectiveness of strain engineering. This is because energy valley splitting due to quantum confinement may weaken the strain effect. In this paper, we investigate this phenomenon by an in-house quantum transport simulator, Schrödinger equation Monte Carlo in three dimensions, which can provide...
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