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Improvement in the resistive switching characteristics using TiN bottom electrode on TaOx/W structure as compared to W electrode is reported. The thickness of TaOx layer is confirmed by high-resolution TEM image. The memory device with TiN electrode has shown formation-free repeatable bipolar resistive switching with resistance ratio of >30. Besides, improved resistive switching performance in...
Influence of GeOx layer on resistive switching memory performance in a simple and CMOS compatible W/WOx/GeOx:WOx mixture/W structure has been investigated for the first time. All layers are confirmed by both HRTEM and XPS. This memory device has enhanced performance in terms of the resistance ratio, uniformity, and program/erase cycles as compared to W/WOx/W structure. An excellent read endurance...
The improvement in resistive switching memory parameters by embedding IrOx nanodots in IrOx/AlOx/IrOx NDs/AlOx/W cross-point structure is reported. The fabricated memory devices exhibit MLC operation of both LRS and HRS, excellent read endurance of >106 times, program/erase endurance of >105 cycles, robust data retention of >104s at 125°C with a small operation voltage of ±2V and a low CC...
Improved resistive switching memory characteristics in a W/Ti/Ta2O5/W device with a small size of 150 nm have been investigated for the first time. TEM image shows amorphous Ta2O5 film with a thickness of ~7 nm. Memory device has a good repeatable bipolar memory behavior and a large sensing margin of ~2000. The memory device has shown good endurance of at least 104 cycles and excellent data retention...
The nanoscale (EOT<;6 nm) flash and resistive switching memories using IrOx nanocrystals have been investigated. The IrOx nanocrystals embedded in high-κ Al2O3 film are observed by both high-resolution transmission electron microscopy and x-ray photoelectron spectroscopy. The average size and density of IrOx nanocrystals are found to be ~3 nm and ~7×1012/cm2, respectively. The flash memory devices...
Novel bi-layered solid electrolytic based resistive switching memory device using Al/Cu/Ge0.2Se0.8/Ta2O5/W structure has been investigated for the first time. The tight distribution of resistance states and threshold voltage are achieved as compared to that of single layer Ge0.2Se0.8 solid-electrolyte. Stable endurance of ≫3.5×105 cycles and excellent retention characteristics with a low compliance...
Low current/voltage (1 nA/1.3V) operation of resistive switching memory device using Cu metallic filament in Ge0.2Se0.8 solid-electrolyte has been investigated. This resistive memory device have a large resistance ratio of > 10 at 1 nA current compliance, good endurance of ~105 cycles, and good data retention with a current of 1 nA up to 2×103 seconds. The low resistance state decreases with increasing...
Bipolar resistive switching memory device using high-kappa Ta2O5 solid electrolyte in a Cu/Ta2O5/W structure with the device sizes from 0.2-8 mum was investigated. This resistive memory device has a high threshold voltage of 0.75 V, high resistance ratio (RHigh/RLow) of 3times103, good endurance of > 103, and excellent retention at 150degC. The memory device with a low current operation of 5 pA...
Bipolar resistive switching memory device with a low power operation (200 muA/1.3 V) in a W/Ge0.4Se0.6/Cu/Al structure has been investigated. A stronger Cu chain formation can be observed by monitoring both the erase voltage and current. The low resistance state (RLow) decreases with increasing the programming current from InA to 500 muA, which can be useful for multi-level of data storage. This resistive...
Low current/voltage (~10 nA/1.0V) resistive switching memory device in a Cu/Ta2O5/W structure has been proposed. The low resistance state (RLow) of the memory device decreases with increasing the programming current from 10 nA to 1 mA, which can be useful for multi-level of data storage. This resistive memory devices have stable threshold voltage, good resistance ratio (RHigh/RLow) of 5.3times107,...
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