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The fine grain structure of poly-Si thin-film transistor (poly-Si TFT) is known to affect the carrier transport and device performance. Various methods have been proposed to increase the grain size of poly-Si thin films, including excimer laser annealing (ELA) and metal-induced lateral crystallization (MILC), in order to improve device characteristics. An alternative approach for minimizing the negative...
In this work, a new test structure was employed in the analysis of hot-carrier degradation under AC operations. We find that the on-current degrades with reducing falling time and confirm that the damage region is located near the drain. The experiment shows such tester has a high sensitivity in detecting AC degradation and provides unambiguous evidence that the damageoccurs during transient stages...
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