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In this paper, an advanced Reverse Conducting (RC) IGBT concept is presented. The new technology is referred to as the Bi-mode Insulated Gate Transistor (BIGT) implying that the device can operate at the same current densities in transistor (IGBT) mode and freewheeling diode mode by utilizing the same available silicon volume in both operational modes. The BIGT design concept differs from that of...
Today, the main topologies for power conversion for medium voltage applications are mainly determined by the available voltage ratings of the power semiconductor devices. In this paper we shall examine the main existing topologies for medium voltage wind power energy conversion and determine the voltage levels that can be can be achieved with the currently available high voltage semiconductor components...
High voltage semiconductor devices continue to play a major role in modern megawatt power systems especially in the fields of traction, transmission and distribution (T&D) and industrial applications. The main development trend of power devices has always been focused on increasing the power ratings while improving the over all device performance in terms of reduced losses, increased robustness,...
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