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This paper describes the yield degradation caused by nickel silicide (NiSi) disconnection in a salicide formation process used in system on chip (SoC) manufacturing. Physical analysis revealed that the failure was caused by a NiSi disconnection on a gate electrode. To identify the root cause in such a complicated issue, “Semimetrics,” which integrates a statistical analysis and the equipment data...
This paper describes a copper interconnection failure in a damascene process of a system on chip (SoC) caused by the plating bath degradation in copper electroplating equipment. By ldquosemimetricsrdquo using EES (Equipment Engineering System) data for many variables in the equipment and some statistical methods, it is clarified that the root cause of the interconnection failure is the plating bath...
This paper describes copper interconnection failure in a damascene process of a system on chip (SoC) caused by plating bath degradation in copper electroplating equipment. The physical analysis using cross-sectional transmission electron microscopy revealed the failure was caused by a void in a via-hole. By using equipment engineering system (EES) data of many variables in the equipment and some statistical...
This paper describes development and actual utilization of a fab-wide equipment monitoring system using a secondary port separating a primary port shared by an MES and a fab-wide FDC (fault detection and classification) system. In data collection of equipment parameter, a new concept of important parameter is introduced. As an example of the fab-wide FDC, an FDC of a slurry flow rate fault in CMP...
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