The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
In Si-LSI industry, the variation of device characteristics has been one of the issues, and it has been continuously developing the several methods to mitigate and straighten out it. Currently, the local and random variation has been still the critical issue, compared to the global variation and the systematic one. The main mechanisms in that variation can be line edge roughness (LER) and random dopant...
On behalf of the Organizing Committee of the International Symposium on Semiconductor Manufacturing (ISSM) 2010, I am pleased to welcome all of you to the eighteenth annual ISSM.
On behalf of the International Symposium on Semiconductor Manufacturing (ISSM) 2010 Executive Committee, it is a great pleasure and honor for us to have you at the eighteenth annual ISSM.
To reduce the CO2 emission, to save the energy, and to reduce fossil fuel usage are critical requirements for future green society. Smartgrid is one of technology to realize these matters. Semiconductor technology is also very important measures to contribute these Smartgrid products. Prospects of Smartgrid and the impacts to semiconductor business will be presented as a keynote speech.
Summary form only given. A demand to realize low carbon society becomes very strong. For CO2 reduction, energy saving and/or the new energy product used new technology such as Photovoltaic power generation technology and wind power generation technology have been introduced to the market. The power electronics is main technology for the energy-saving and will progress more in future. The power device...
MtM is an old field, but it has a new life now. Green requirement, cloud computing, and natural world interfaces demand for much more sophisticated MtM solutions. This trend presents both challenges and opportunities for IDM's, fabless companies, and foundries. To meet these new expectations for MtM, we need high tech solutions which include advanced process modules, comprehensive design kits, precise...
Currently, inline metrology and tool FDC data are the main information source which engineers use to conduct the process control. However, metrology data are very expensive in terms of their tool cost and its hit on cycle time. Moreover, metrology measurement accuracy is increasingly questionable due to the rapid device shrinking factor. All leading fabs are employing EES/FDC system to provide real...
As the market for advanced technology continues its endless march forward, the industry faces increasing challenges to sustain the current pace of innovation. Leading-edge process technology is becoming more cost-intensive, design companies are developing chips with extraordinary complexity, and the next generation technology will require an unprecedented level of performance, and cost-effectiveness...
This paper proposed a very useful DOE trend in terms of Cu seed step coverage, necking CD, and side asymmetry improvement by optimizing of process parameters included bias of deposition, electromagnet, and bias of etch. And it displayed the best sidewall and bottom step coverage of 54% and 68% by a novel PVD sputtering source in which attributed from metal ion fraction increasing as applying in top...
Ultra Thin Body Devices are a way to solve technical challenges requested by advanced digital technology nodes. Combined with planar CMOS approach, they lead to the need for Ultra-Thin SOI (UTSOI) wafers. These 300 mm ultra-thin SOI layer are now available with silicon target thickness at 12 nm, controlled within a few angström range from Wafer to Wafer to Transistor level.Ultra-Thin SOI & BOX...
Microscratches and microcracks generated by chemical mechanical polishing (CMP) show a photoelasticity effect under stress applied by a piezoactuator. The polarization and intensity of the light scattered from microcracks are found to change. On the basis of the abovementioned effect, microcracks formed on a 200-mm wafer subjected to CMP are inspected, and the detected microcracks are studied by SEM...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.