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This paper describes a copper interconnection failure in a damascene process of a system on chip (SoC) caused by the plating bath degradation in copper electroplating equipment. By ldquosemimetricsrdquo using EES (Equipment Engineering System) data for many variables in the equipment and some statistical methods, it is clarified that the root cause of the interconnection failure is the plating bath...
This paper describes copper interconnection failure in a damascene process of a system on chip (SoC) caused by plating bath degradation in copper electroplating equipment. The physical analysis using cross-sectional transmission electron microscopy revealed the failure was caused by a void in a via-hole. By using equipment engineering system (EES) data of many variables in the equipment and some statistical...
Virtual metrology for a plasma particle in plasma etching equipment is described in this paper for the first time. No direct measurement of plasma particles is carried out by an inspection tool but the generation of plasma particles can be predicted by detecting plasma density change indirectly measured using an equipment monitoring tool. It is found that the plasma density change can be detected...
This paper describes development and actual utilization of a fab-wide equipment monitoring system using a secondary port separating a primary port shared by an MES and a fab-wide FDC (fault detection and classification) system. In data collection of equipment parameter, a new concept of important parameter is introduced. As an example of the fab-wide FDC, an FDC of a slurry flow rate fault in CMP...
This paper describes the development of monitoring technology in an ion implanter to determine a root cause of particle generation. It is demonstrated that an in-situ particle counter is not so useful in the region of a few numbers of particles. By analyzing equipment parameter data like an ion beam centroid, an electrode position and a magnetic flux density at a mass analyzer using equipment monitoring,...
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