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Given adequately low source/drain (S/D) access resistivity and dielectric interface trap density (Raccess < 50 Ω-µ,1 and Dit < 2 · 1012 cm−2 eV−1,2 respectively), InGaAs MOSFETs will provide greater on-state current than silicon MOSFETs at the same effective oxide thickness (EOT). The access resistance must be obtained in a self-aligned structure with a contacted gate pitch ∼4 times...
We report results from a 130nm Indium Phosphide (InP) double heterojunction bipolar transistor (DHBT) technology. A 0.13×2µm2 transistor exhibits a current gain cutoff frequency ft >520GHz, with a simultaneous extrapolated power gain cutoff frequency fmax>1.1THz. The HBTs exhibit these RF figures-of-merit while maintaining a common-emitter breakdown voltage BVCEO=3.5V (JE=10µA/µm2). Additionally,...
Abstract-We report an InPZIn0.53Ga0.47As/InP double heterojunction bipolar transistor (DHBT) demonstrating simultaneous 430-GHz fτ and 800-GHz fmax. The devices were fabricated using a triple mesa process with dry-etched refractory metals for emitter contact formation. The devices incorporate a 30-nm-thick InP emitter semiconductor which enables a wet-etch emitter process demonstrating 270-nm-wide...
A 0.25µm InP DHBT process has been developed for THz frequency integrated circuits. A 0.25×4µm2 HBT exhibits an extrapolated ƒt/ƒmax of 430GHz/1.03THz at IC =11mA, VCE= 1.8V. The transistors achieve this performance while maintaining a common-emitter breakdown voltage (BVCEO) >4V. Thin-film interconnects and backside wafer processes have been developed to support selected IC demonstrations. The...
We report the effects of UV-ozone oxidation, oxide removal etch chemistry (dilute HCl or concentrated NH4OH), semiconductor doping, and annealing on the contact resistivity (rhoc) of Ti0.1W0.9 refractory alloy to n-type InGaAs. The semiconductor surface was oxidized through exposure to UV-ozone, then subsequently etched by either dilute HCl or concentrated NH4OH before TiW contacts were deposited...
Type I InP/InGaAs/InP double heterojunction bipolar transistors were fabricated using a simple mesa structure, where emitter junction widths have been scaled from 250 nm to 200 nm. These devices exhibit fmax in excess of 800 GHz, and ftau = 360 GHz. Greater than fifty percent device yield was obtained by employing two 25 nm SiNx sidewalls to protect and anchor the refractory metal emitter contact...
We examine the feasibility of developing bipolar transistors with current-gain and power-gain cutoff frequencies of 1-3 THz. High bandwidths are obtained by scaling; the critical limits to such scaling are the requirements that the current density increase in proportion to the square of bandwidth and that the metal-semiconductor contact resistivities vary as the inverse square of device bandwidth...
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