A novel device structure containing a SiGe stressor is used to impose tensile strain in nMOSFET channel. 400MPa of uniaxial tensile stress is induced in the Si channel through elastic relaxation/strain of the SiGe/Si bi-layer structure. This strain results in 40% mobility enhancement and 15% drive current improvement for sub-60nm devices compared to the control device with no strain
CMOS technology scaling has resulted in a continuous improvement in RF performance of silicon MOSFETs. fT and fMAX in excess of 300GHz has been demonstrated in production CMOS nodes . 400GHz fT for ultra-short channel MOSFET with LGATE of 10nm has also been reported . CMOS based RF solutions are already mainstream for applications in the 1-10GHz regime and with the RF performance of these devices...
Financed by the National Centre for Research and Development under grant No. SP/I/1/77065/10 by the strategic scientific research and experimental development program:
SYNAT - “Interdisciplinary System for Interactive Scientific and Scientific-Technical Information”.