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A manufacturable 130nm SiGe BiCMOS RF technology for high-performance mm-wave analog applications having a high-speed SiGe Heterojunction Bipolar Transistor (HBT) integrated into a full-featured RFCMOS is presented. The technology features a high performance (HP) SiGe HBTwith fT/fMAX of 260/320 GHz, a high breakdown (HB) HBT with BVCEO of 3.5V 130nm RF CMOS, and a full suite of passive devices. Specific...
In this paper, we discuss a novel technique to reduce base resistance (Rb) and collector-base capacitance (Ccb) for higher Fmax in high-speed SiGe HBTs. In order to reduce Ccb, we first located the origins of the different components of Ccb through AC extraction. Then we utilized scanning capacitance measurements (SCM) to examine the shape of the collector-base depletion. We then propose a method...
The total ionizing dose and laser-induced transient response of a new 4th generation 90 nm IBM SiGe 9HP technology are investigated. Total dose testing was performed with 63.3 MeV protons at the Crocker Nuclear Laboratory at the University of California, Davis. Transient testing was performed on the two-photon absorption system at Naval Research Laboratory. Results show that the SiGe HBTs are dose-tolerant...
In this paper, we investigate the emitter resistance Re in SiGe HBTs with speeds up to 280GHz, using a U-shaped polysilicon emitter. We observed that Re increased with lateral scaling, thereby degrading fT. Although a negligible component in the past, in this experiment Re * Ccb transit time delay is playing a more significant role in limiting fT. Re was modeled to explain the increase due to lateral...
We present record-performance RF devices and circuits for an SOI CMOS technology, at 35nm Lpoly. Critical RF/analog figure of merits in FET such as current gain cut-off frequency (fT), 1/f noise, and high-frequency noise figure at various bias and temperature conditions are measured and modeled to enable high-performance circuit design. Measurement results show peak fT's of 340GHz and 240GHz for 35nm...
CMOS technology scaling has resulted in a continuous improvement in RF performance of silicon MOSFETs. fT and fMAX in excess of 300GHz has been demonstrated in production CMOS nodes [1]. 400GHz fT for ultra-short channel MOSFET with LGATE of 10nm has also been reported [2]. CMOS based RF solutions are already mainstream for applications in the 1-10GHz regime and with the RF performance of these devices...
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