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Accurate modeling of large-signal behavior of power amplifiers (PAs) is key in minimizing the number of design spins and design cycle time. This paper presents the 1- and 2-tone large-signal behavior of SiGe HBT with respect to power, frequency, bias, and transistor geometry. While the transistor's weak non-linearity is largely determined by the trans-conductance (Gm) and the quasi-static (QS) charge-storage...
There have been many demonstrations of Si and SiGe power amplifers (PAs) that have achieved good published performance. However, penetration of these technologies into the mainstream handset power amplifier market has been limited. In this paper, we review some of the state-of-the-art PA results in these technologies and discuss the performance challenges for silicon-based PAs. We also discuss some...
This works describes the use of electro-thermal numerical simulations for the design, modeling, and reliability evaluation of semiconductor devices and electronic circuits. Examples at the device level focus on 2D and 3D simulations of GaAs-based HFETs and HBTs, while a case study of hybrid high-power DC/DC converters is shown to illustrate the possibilities and challenges of thermal simulation at...
A simple statistical modeling methodology is presented for InGaP-GaAs HBTs devices and RF power amplifier circuits. The modeling approach utilizes in-line electrical parameter control data and DOE method to establish relationships between important material and model parameters. The key considerations of parameter selection are given and essential connections from device physics to model parameters...
The last decade has seen GaAs HBTs emerge as the dominant technology in wireless handset power amplifiers. Modern application requirements and size limitations have driven industry leaders towards the co-integration of depletion mode n-FET and GaAs HBT. The merger of bipolar and FET, or BiFET, gives an additional degree of freedom in the design of advanced power amplifiers independent of a silicon...
InGaP-GaAs based BIFET is a novel technology that integrates HBT and FET onto a single wafer. The technique expands functionality of circuits and reduces the cost. A novel four-terminal large-signal model was developed for accurate DC and RF applications. The device has a p-layer as backgate that has significant impact on the DC/RF characteristics and therefore, the drain current, gate current, leakage...
Production and laboratory AlGaAs/GaAs HBT processes were developed, enabling implementation of high-precision and high-speed circuits to meet the ever increasing demands on information bandwidths. Under normal bias conditions, the production HBT process shows transistor f t and f max above 50 GHz, while the laboratory process reveals f t of 60 GHz and f max of 110 GHz...
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