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This works describes the use of electro-thermal numerical simulations for the design, modeling, and reliability evaluation of semiconductor devices and electronic circuits. Examples at the device level focus on 2D and 3D simulations of GaAs-based HFETs and HBTs, while a case study of hybrid high-power DC/DC converters is shown to illustrate the possibilities and challenges of thermal simulation at...
Photoluminescence (PL) properties of blue InGaN quantum-well light-emitting diodes have been investigated at 20 K as a function of excitation power and reverse bias voltage (external field). PL intensity reduction of the main blue emission band is observed by increasing the reverse field. The photoexcitation power dependence suggests that the hole escape process plays an important role for the determination...
Transport properties of multiple electron species in two samples of indium nitride (InN) grown by molecular beam epitaxy (MBE) have been measured. Variable field Hall and resisitivity data were used in a quantitative mobility spectrum analysis (QMSA) to extract the concentrations and mobilities of two electron species, attributed to the bulk and a surface accumulation layer. While the properties of...
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