The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
As we known, the measurement of junction-to-case thermal resistance (Rth-JC) of semiconductor power devices is very important. In this paper, an approach of transient dual interface method (TDIM) with gate-source voltage (Vgs) as the temperature sensitive electrical parameters (TSEP) was investigated for the measurement of Rth-JC of packaged SiC MOSFET. The measured Rth-JC value of packaged SiC MOSFET...
Raman-based Distributed Temperature Sensors (RDTS) allow performing spatially resolved (1 m) reliable temperature measurements over several km long Optical Fibers (OFs). These systems are based on the temperature dependence of the intensities of both the Stokes and anti-Stokes components of the Raman back-scattered signal. One of the specific issues associated with RDTS technology in radiation environments...
In this paper, the performances of a lateral thin-film PIN photodiode based on silicon-on-insulator technology are reported for applications from blue to red wavelengths. The platform consists of a micro-hotplate with a suspended heater and a photodiode. Responsivities of 0.01 to 0.05 A/W were obtained for 450–900 nm light range in reverse bias operation. Suspended photodiodes give up to 5x responsivity...
This paper presents new results revealing the electrical properties of the silicon-on-polycrystalline silicon carbide hybrid substrate. The thermal resistance in the substrate was measured and compared to simulations and is linked to the measured reduced self-heating in LDMOS transistors. The mobility in the device layer was extracted and shows slightly lower values in the hybrid compared to the SOI...
The area of evaporator on cold storage chamber was added under a constant total evaporator area. Composite and stereoscopic structure with laminated exchanger flake was used on evaporator of freezing chamber. Wing - flakes were fixed outside the refrigerant pipe coil with a S-type to increase the refrigeration capacity of the top part and the bottom part of freezing chamber. The refrigeration cycle...
Thermal characterization of the new Si-on-SiC hybrid substrate has shown thermal properties superior in comparison with SOI. The thermal resistivity was shown to be a factor of four lower, and the lateral thermal spread was much more efficient, as is explained by the excellent heat conductivity of the SiC substrate. These results correspond well to the absence of MOSFET self-heating effects for the...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.