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We report on the demonstration of enhancement-mode n-channel GaN-based hybrid MOS-HFETs realized on AlGaN/GaN heterostructure on silicon substrates with a large drain current operation. The GaN-based hybrid MOS HFETs realized the threshold voltage of 2.8 V, the maximum drain current of over 70 A with the channel width of 340 mm. This is the best value for an enhancement-mode GaN-based FET. The specific...
We have studied and optimized the breakdown voltage of enhancement-mode n-channel GaN hybrid MOS-HEMTs on sapphire substrate. These MOS-gated transistors, with different Mg doped p-type GaN layer underneath the unintentional doped AlGaN/GaN layer, have breakdown voltage as high as 1300 V using a dielectric isolation (DI) RESURF approach.
This paper presents a high power efficiency DC-DC buck converter in Gallium Arsenide technology targeting integrated power amplifier modules. The buck converter adopts an interleaved structure with negatively coupled inductors. Analysis of the effect of coupling on the steady state and transient response of the converter is given. The coupling factor is selected to achieve a maximum power efficiency...
We report on the experimental demonstration of a novel n-channel GaN hybrid MOS-HEMT realized on AlGaN/GaN heterostructure on sapphire substrate. This enhancement-mode MOS-gated heterojunction transistor, with 3 mum channel length and 20 mum RESURF length, exhibited a specific on-resistance as low as 20 mOmega-cm2. Simulations indicated the strong dependence of device breakdown voltage on the doping...
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