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In this paper it is shown that HfO2 and HfZrO oxides suffer from large VT instabilities, up to 230mV, when the device width (W) is scaled down to 80nm. It is explained by undesirable lateral oxygen diffusion through the spacers, which mainly modifies the metal workfunction in narrow transistors. HfSiO(N) oxides exhibit a much better immunity to this effect, attributed to a different crystallinity...
In this work we present the integration of Band Engineered TANOS-like memories using HfSiON in the tunnel stack to boost the programming efficiency and improve cycling. An accurate correlation analysis between the gate-stack material physical properties and the memory performances is presented. In particular, the importance of the nitridation step of HfSiON on the memory retention characteristics...
In this work, memory devices integrating a double layer of silicon nanocrystals as trapping medium and a high-k HfAlO-based control dielectric are presented. We will show that the use of two stacked Si-nc layers significantly improves the memory window compared to the single Si-nc layer devices, without introducing dispersions on the charging dynamics. Then, we also evaluate the potentiality of hybrid...
The integration of silicon nanocrystal (Si-nc) nonvolatile memory (NVM) arrays with HfAlOx based interpoly dielectric (IPD) is presented for the first time. The data obtained on array vehicles programmed in Fowler-Nordheim operation regime are in excellent agreement with previously presented results on single cells, as well as theoretical data and allow the evaluation of the scalability of the Si-nc...
In this paper we show for the 1st time that Silicon nanocrystal (Si-ncs) memories with high-k (HfO2, Al2O3 and HfAlO) interpoly dielectrics (IPD) can offer excellent behaviour in the Fowler-Nordheim regime, with great relevance for future sub-45 nm NAND memory generations. We significantly advance the state-of-the-art by showing a strict correlation between the different IPD properties and the performance...
In this paper, different Hf-based oxides (HfO2, HfSiO under several annealing conditions, HfSiON, HfAlO with various compositions) are simultaneously considered as storage layers of charge-trap memories. Based on material characterization analyses, electrical data of memory cells, physical modeling of charge-trap devices, we show that a strict relationship exists between the crystal structure of the...
This paper compares, for the first time, the scalability of physical- and chemical-vapor-deposited (PVD and CVD) TiN on HfO2 as a gate stack for FDSOI cMOSFETs down to 25nm gate length and width. It is shown that not only the intrinsic material properties but also the device architecture strongly influences the final gate stack properties. Reliability issues, stress and gate control in the sub-35nm...
For the first time, we report fully depleted SOI MOS transistors with WSix gate on HfO2. Gate work function, dielectric properties and channel mobility are presented in terms of Si/W ratio and compared to TiN gate devices. A 35% electron mobility gain was obtained with a WSix gate device as compared to a TiN gate transistor. It was found that both mobility and dielectric characteristics were drastically...
For the first time, we report ultra-thin fully depleted silicon-on-insulator MOS transistors with WSix metal gate on HfO gate dielectric down to 40nm gate length. Gate work function, short channel performance and carrier mobility are presented and compared to TiN gate devices. Higher mobility values are obtained with a WSix metal gate device in comparison with a TiN metal gate transistor
In this work, the authors evaluate the potentialities of HfAlO materials as possible candidates for the interpoly dielectrics of future flash memory devices. HfAlO single-layer and oxide/HfAlO/oxide triple-layer stacks were processed and analyzed in terms of coupling and insulating capabilities. The electron conduction modes in these materials, at different temperatures, were also investigated. Finally,...
Many electrical properties of metal/high-k gate stack are dominated by defects. These defects play an important role in reliability issues in particular positive bias temperature instabilities (PBTI). In this paper, we investigate PBTI with a time resolved measurement technique allowing a large-scale time characterization. This technique allows us to separate different mechanisms, namely fast and...
Plasma damages have been studied in HfO2 stacks with metal gate. We demonstrate that some damages generated during the process can be self-cured during T > 475degC anneals used in metallization steps. Moreover, we show that hydrogen plasma at low temperature can be very effective to passivate interface defects although enhanced degradation is observed in the Hdeg annealed oxides
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