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In the title paper, Jan et al. applied the Kane–Mindlin theory to solve the strain field of a unit through silicon via (TSV) model in response to thermal loading ${\Delta }T$ . We comment on this paper by clarifying why the thermal strain ${\alpha \Delta }T$ cannot affect the mobility of electrons. We also demonstrate that a $ {2 \times 2}$ TSV array would suffice to predict the maximum stress.
This paper presents an analytical model to describe the in-plane thermomechanical stresses of a unit TSV model. The goal is to use this model to evaluate the influence of key design parameters in TSV interposers prior to rigorous investigations. The key parameters considered herein are via pitch and array size. This analytical model is based on a circular unit TSV structure, the size of which (in...
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