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Reaction of indium (In) and silver (Ag) during the electroplating process of indium over thick silver layer was investigated. It is found that the plated In atoms reacts with Ag to form AgIn2 intermetallic compound at room temperature. Indium is commonly used in electronic industries to bond delicate devices due to its unique ductility and low melting temperature. In this study, copper (Cu) substrates...
A fluxless process of bonding silicon to Ag-cladded copper using electroplated In-Ag multilayer structure is developed. The Ag cladding on the copper substrate is a stress buffer to deal with the large mismatch in coefficient of thermal expansion (CTE) between semiconductors such as Si (3 ppm/degC) and Cu (17 ppm/degC). To manufacture Ag on copper substrate, two techniques are developed. The first...
New fluxless hermetic sealing technique is reported using electroplated Sn-rich soft solder. Specific type of glass (SCG72) is chosen as a lid material to be sealed onto the alumina ceramic package to deal with thermal expansion mismatch. This glass has nominal coefficient of thermal expansion of 7ppm/degC, which is almost perfectly matching to that of alumina ceramic package. Thick Sn layer is plated...
We report a wafer-to-wafer bonding technique with solder as the bonding layer but without the use of any flux. This fluxless or flux-free feature makes void-free and uniform bonding layer possible. If flux were used as in the case of typical soldering processes, the flux or flux residues could be easily trapped in the joint, resulting in voids and uneven solder layer. Flux residues, if not completely...
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