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This paper presents a TCAD based design technology co-optimization (DTCO) process for 14nm SOI FinFET based SRAM, which employs an enhanced variability-aware compact modeling approach that fully takes process and lithography simulations and their impact on 6T-SRAM layout into account. Realistic double patterned gates and fins and their impacts are taken into account in the development of the variability-aware...
In this paper, we present a FinFET-focused variability-aware compact model (CM) extraction and generation technology supporting design-technology co-optimization. The 14-nm CMOS technology generation silicon on insulator FinFETs are used as testbed transistors to illustrate our approach. The TCAD simulations include a long-range process-induced variability using a design of experiment approach and...
This paper presents a hierarchical variability-aware compact model methodology based on a comprehensive simulation study of global process variation and local statistical variability on 20nm bulk planar CMOS. The area dependence of statistical variability is carefully examined in the presence of random discrete dopants; gate line edge roughness; metal gate granularity; and their combination. Hierarchical...
In this paper we illustrate how by using advanced atomistic TCAD tools the interplay between long-range process variation and short-range statistical variability in FinFETs can be accurately modelled and simulated for the purposes of Design-Technology Co-Optimization (DTCO). The proposed statistical simulation and compact modelling methodology is demonstrated via a comprehensive evaluation of the...
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