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The interfacial intermetallic compound (IMC) is a crucial factor for solder jointing reliability assessment and a suitable IMC layer size guarantees the quality of solder joints. On one hand, the interfacial grains keep growing with reaction time during soldering; On the other hand, with the coming universal application of 3D electronic packaging in modern electron industry, multiple reflows become...
The physical mechanism of the time, emitter lateral dimension (AE) and low-high temperature dependent degradation under mixed-mode stress for C-doped SiGe HBTs (SiGe:C HBTs) on thin-film silicon-on-insulator (SOI) is investigated. We focus on the impact of mixed-mode stress on device characteristics such as base current (IB) and current gain (β) degradation rate, device scaling issue and low-high...
Architectural vulnerabilities in basic analog circuits that can be exploited to embed analog hardware Trojans are identified. Challenges of detecting the presence of analog hardware Trojans are discussed. An example is presented of a simple widely used reference generator that incorporates an embedded analog hardware Trojan that requires no extra circuit components, no area overhead, and that leaves...
Challenges of using standard circuit simulators to determine the presence or absence of undesired operating points are discussed. Examples are given of circuits and simulation strategies that show the presence of undesired operating points when they exist but other examples are given that show the same strategies can fail to show the presence of undesired operating points under modestly different...
A high-performance bootstrapped comparator operating with a single-polarity power supply is demonstrated for the development of GaN smart power ICs. The comparator features monolithically integrated enhancement-mode (E-mode) and depletion mode (D-mode) AlGaN/GaN HEMTs. The tail current source uses E-mode HEMT, enabling single-polarity power supply. The input stage could be either E-mode or D-mode...
Tungsten oxide nanostructures have been paid much attention because of their particular physics and chemical properties. But until now, it is difficult to realize patterned growth of tungsten oxide nanowire arrays. In this paper, we demonstrate that tungsten oxide nanowire arrays can be controllably synthesized in patterned arrays at low temperature of 550°C by a simple ceramic template method. The...
We report dynamic and microscopic investigations of electrical stress induced defects in a high-k/metal gate stack by electron beam induced current (EBIC). The correlation between dielectric breakdown and EBIC sites are reported. A systematic study was performed on pre-existing and electrical stress induced defects. These defects are successfully visualized. The origin of pre-existing defects is discussed,...
The electronics industry is moving from lead-based solder systems to lead-free solder systems. This change increases the processing temperatures used to melt and flow the new lead-free solders. This is causing many of the traditional polymeric materials used for electronic components to fail. Therefore, the polymers with high temperature resistance, such as VICTREXreg PEEK (poly (aryl ether ether...
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