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LIHT (Lack Injection of Hole Termination) structure is proposed and studied. Compared with conventional termination structure, the novel structure features a partial N-doped anode in the transition region and termination region instead of a whole P-doped anode. The LIHT structure stores less carries in the drift region of the transition region and termination region, in which holes concentration reduced...
In this work, a high performance AlGaN/GaN power diode featuring MIS-gated hybrid anode (MG-HAD) with ultralow forward turn-on voltage (VT) and low reverse leakage current was experimentally demonstrated. By accurately designing the recessing depth in the MIS-gate region, a record low VT of 0.2 V for GaN power diode was obtained in the MG-HAD with 4-nm recessed-barrier-thickness. Meanwhile, the device...
A low turnoff loss (Eoff) silicon-on-insulator lateral insulated gate bipolar transistor with p-buried layer and double gates (DG-PB SOI LIGBT) is proposed. The proposed LIGBT features a p-buried layer (PB) in the n-drift region and an additional trench gate. Due to the large capacitance effect and hole extraction path induced by PB, larger number of the carriers is removed under low anode voltage...
This paper presents the design of a 110GHz frequency tripler realized by GaN-based planar Schottky diodes. The complete multiplying circuit and diodes is fabricated with a 127-um-thick Rogers/RT5880 substrate and is mounted in a split waveguide block. Simulation result shows that output power is achieved 100mW in 110GHz with a constantly 1.5W driven power.
In this paper, a cathode-short MOS-controlled thyristor (CS-MCT) is proposed and fabricated for pulse power application. The CS-MCT is distinguished from conventional MCT (CON-MCT) with a cathode-short structure, which forms an extracting path for hole current at gate-ground (Vg=0 V) and brings about a normally-off characteristic. During the conduction of current in the on-state, the PNPN structure...
Magnetic flux leakage transformer (MFLT) is widely used in the stable power supply of electronic equipment. For MFLT, whose characteristics become more complex and nonlinear for its leakage and load, the traditional circuit analysis method of transformer could not describe it accurately. In this paper, a nonlinear-transient field-circuit coupled finite element model is used to simulate the MFLT with...
In this paper, a novel Bi-directional Electric Field Enhanced Field Stop Reverse Blocking Insulated Gate Bipolar Transistor (BEFE-FS-RB-IGBT) is proposed. It features N-type field stop layers and P-type electric field enhancement regions in both top trench MOS cell part and the anode side of the device. From the simulation results, the thickness of the drift region can be reduced to 58μm, only 70%...
A new BLR structure with P type islands (PI-BLR) is proposed, the principle of which is to introduce P type islands into the JFET region of the basic BLR structure. The forward voltage drop (VF) of BLR can be further reduced without affecting the breakdown voltage of BLR. Thus, an attractive method is provided to coordinate the trade-off relationship between forward voltage drop and breakdown voltage...
A novel hybrid-anode AlGaN/GaN field-effect rectifier (HA-FER) with low operation voltage has been proposed. The rectifier features a Schottky gate controlled channel between the cathode and anode, by integrating the recessed-Schottky gate and anode Ohmic contact together (hybrid-anode). The turn-on voltage of HA-FER is determined by the threshold voltage of the channel instead of the Schottky barrier,...
A 700 V SA-LIGBT structure for high voltage applications is presented. An important feature is that the device has a good tradeoff among onset voltage, on-resistance and turn-off speed. This is realized mainly by two methods: large extent of P+ diffusion paralleled with N+ diffusion and the introduction of N-buffer layer in the anode. A robust SA-LIGBT is fabricated successfully with a breakdown voltage...
In this paper, an active oxygen-supplying micro direct methanol fuel cell (μDMFC) and an air-breathing μDMFC were designed, fabricated and tested. Stainless steel plates with the thickness of 200μm were chosen to fabricate the current collectors by the micro stamping. The 5-layered membrane electrode assembly (MEA) was fabricated by the catalyst coated membrane (CCM) method. The polymethyl methacrylate...
A new lateral insulated-gate bipolar transistor (LIGBT) structure on SOI substrate, called buried N-region controlled anode LIGBT (BNCA-LIGBT), is proposed and discussed. The BNCA-LIGBT is a modified structure of the N-region controlled anode LIGBT (NCA-LIGBT) which we have presented earlier. Numerical simulation results of the BNCA-LIGBT operation show that the turn-off speed is faster and on-state...
A new Lateral insulated-gate bipolar transistor (LIGBT) structure on SOI substrate, called controlled anode LIGBT (CA-LIGBT), is proposed. The design of the new structure results in high breakdown voltage and good trade off between turn-off time and on-state voltage drop. Simulation results show that the CA-LIGBT has about 85.0% reduction in turn-off time and about 20.0% increase in on-state voltage...
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