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We report on a thickness dependence of the terahertz (THz) bull's eye antenna that uses surface plasmon. For the optimization of the device structure and the strong THz field enhancement, we investigate the thickness dependence of substrate for optimization. We achieved a high THz transmission through a sub-wavelength aperture and observed that the main peak has a weak dependence but the side peaks...
We fabricate and characterize p-channel double quantum dots (DQDs). The DQDs are formed on a silicon-on-insulator (SOI) wafer and integrated with a single hole transistor (SHT) as a charge sensor. We observe charge stability diagram of the DQDs in the characteristic of the charge sensor. Furthermore, few-hole regime in the DQDs is clearly obtained.
We fabricated double quantum dots (DQDs) and a single electron transistor (SET) as a charge sensor (CS) on highly-doped silicon-on-insulator (SOI) substrate. We observed Coulomb oscillations, and Coulomb diamonds in the SET, and estimated its charging energy to be ∼15meV. We detected the change in the number of electrons of the DQDs with the CS, and observed a honeycomb-like charge stability diagram...
We realized lithographically-defined electrically-tunable silicon quantum dot (QD) and charge sensor. Two types of device were fabricated and measured. One is heavily P-doped, and the other is back gate (BG)-induced undoped QD device. I–V characteristic of QD and charge sensor was clearly observed in both devices. Then, we estimate capacitance between the charge sensor and QD or two side gates (SGs)...
The band structures and carrier transport in (110) pFETs are thoroughly studied over a wide temperature range under high magnetic fields. In (110) pFETs, the degenerate hole bands in bulk Si are separated into the higher energy band (H band) and the lower energy band (L band). The energy difference between these bands is experimentally evaluated. The effective masses of each band are directly obtained...
One-dimensional semiconductor nanostructures have attracted much attention because of their potential applications in the design of novel electronic, photonic, and sensing devices. Due to their high mobility of electrons and holes, Ge nanowires are particularly attractive for high-speed field-effect transistors. Moreover, Ge nanowires are potentially useful for building quantum bits because of a long...
We have successfully fabricated good quality NaNbO3 films on MgO substrate by pulsed laser deposition by using K-Ta-O (KTO) buffer layer. SrRuO3 (SRO) lower electrode layer was deposited on KTO/(100)MgO substrate and then the NaNbO3 film was deposited. X-ray diffraction showed that the NaNbO3 film was epitaxially grown on a (100)SRO/KTO/(100)MgO substrate. The P-E hysteresis loop of the NaNbO3 film...
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