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An InGaAs/InP single-photon avalanche photodiode (SPAD) with a high differential gain was achieved by changing the multiplication region thickness and the sheet charge density of the charge layer. A gain of more than 100 was obtained. The DCR is less than 1k with the frequency up to 250 kHz.
In this paper, the effects of the thickness of the multiplication region (Tm), the sheet charge density of the charge control layer (Dc) and the guard ring design to a separate absorption, grading, charge, and multiplication InGaAs/InP single photon avalanche diode (SPAD)'s performance are numerically discussed. Optimized Tm and Dc are designed for a SPAD. Implanted guard ring is revealed to be easier...
In this work the luminescence of RE ions implanted into InGaN/GaN multi-quantum wells (MQWs) and supperlattice (SL) structures was investigated. The interface quality between the QW and SL layers before and after implantation as well as after thermal annealing treatment has been studied. The corresponding luminescence from RE-doped InGaN/GaN structures was investigated by means of optical spectroscopy...
We report an advanced InP/InGaAs double heterojunction bipolar transistor technology using aggressive scaling in device layout and epitaxial stack. The device employs a 220 Aring highly doped base and a 1200 Aring collector designed to support current densities in excess of 12 mA/mum2. Transistors with emitter width of 0.25-mum have exhibited simultaneous measured fT and fmax frequencies in the...
Novel design concepts and cutting edge results are presented for high-power AlGaN/GaN Heterostructure Field-Effect Transistor switches for power converters, control and radio-frequency applications. For power switching, the HFET design has to be different from that of power amplifiers in order to minimize the contact resistance and avoid current crowding in the metal electrodes of large-periphery...
In this paper, we present the latest advancements of short gate length InGaAs/InAlAs/InP high electron mobility transistor (InP HEMT) devices that have achieved extremely high extrapolated Fmax above 1 THz. The high Fmax is validated through the first demonstrations of sub-MMW MMICs (s-MMICs) based on these devices including the highest fundamental transistor oscillator MMIC at 347 GHz and the highest...
Maximizing In composition in the channel structures of high-electron-mobility transistors on InP is one important aspect of achieving devices capable of operating beyond 300 GHz. In this article, we compare dc and rf performance results from two variations of one such device design, incorporating a composite-channel structure comprised of InAs clad by InP-lattice-matched InGaAs. The only difference...
In this paper, we demonstrate a vertically integrated 3-D MMIC phase shifter at 8 GHz that utilizes a 5-layer benzocyclobutene (BCB) process providing a total of 7 metal layers. This multi-layer technology is fully compatible with Northrop Grumman's 0.15 um GaAs HEMT technology and enables a high level of MMIC compaction which will substantially reduce the size and cost of MMICs. A key feature of...
We have recently developed a sub-50nm gate length InP HEMT (high electron mobility transistor) process with a peak transconductance of 2000 mS/mm at 1V. A 3-stage single-ended common source 150-220 GHz MMIC LNA demonstrates greater than 20 dB gain at 200 GHz (> 7 dB gain per stage) and is >5 dB higher LNA gain compared to the same MMIC design fabricated on our baselined 70 nm gate length InP...
We report InP-based double heterojunction bipolar transistors (DHBTs) with emitter widths of 0.25 mum and RF performance of fT = 400 GHz and fmax >500 GHz. The HBT structure consists of an InP emitter with an abrupt emitter-base interface, a 300 compositionally graded InGaAs base region, and a 1200Aring collector. The scaled devices reported here have been integrated with a planar, multi-level...
Two-color, time-resolved reflectivity is used to study femtosecond and picosecond carrier dynamics in III-V ferromagnetic semiconductors. Ultrashort carrier lifetimes, oscillations, and multi-level decay processes were observed. We discuss the dependence of data on the probe wavelength, pump intensity, and sample temperature
We have used two-color time-resolved magneto-optical Kerr effect spectroscopy to study the dynamics of spin/magnetic order in InMnAs. We observed ultrafast photo-induced softening due to spin-polarized transient carriers. This transient softening persists only during the carrier lifetime (~ 2 ps). Our data clearly demonstrates that magnetic properties can be strongly modified in an ultrafast manner
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