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Electrical properties of silicon-dot-based single-electron memory devices were investigated using numerical simulation. For an accurate calculation of tridimensional electron wave functions in the dots and in the dot-isolation surrounding the nextnano++ simulator was employed. Tunneling rates between the dot and other electrodes were calculated using a post-processing of the electron-state-specific...
In this paper we present an extensive comparison of tunneling device simulations versus experimental results. Different tunneling models were used to simulate long channel silicon on insulator tunneling field effect transistors. The results were compared to experimental results, which were taken from the literature. A calibrated parameter set of the dynamic NonLocal-Tunneling model is presented, which...
In this work, the influences of advanced annealing schemes, spike and flash annealing and combinations of them, on the electrical behavior of modern FD SOI MOSFETs have been investigated by numerical simulations. Process simulations have been performed for comparing the two-dimensional diffusion behavior of the dopants under the different annealing schemes. Device simulations have been performed for...
The fully overlapped nitride mask defined (FOND) MOSFETs1) exhibit a much better immunity with respect to hot carrier degradation compared to conventional LDD devices. The reason for the better reliability performance of these devices is the special shape of the LDD extentions formed by the FOND process. In order to simulate electrical properties and hot carrier degradation characteristics of FOND...
In this presentation the NEWSSTAND network is outlined which has been established as a part of the Human Capital and Mobility Programme funded by the EU. Within NEWSSTAND, major semiconductor research centers and companies are active. The network partners combine their individual expertize in order to promote the progress in the field of semiconductor process and device modeling and simulation. Network...
With a novel delineation technique, the increase in dopant concentration due to ions which have been scattered out of a vertical mask edge during ion implantation was demonstrated. The equiconcentration lines show that the implanted concentration near the mask edge is greater than that in the middle of the implantation window. This effect could be simulated qualitatively with a Monte Carlo simulation...
For the analytical description of doping profiles after ion implantation, good multilayer models are required to describe the implantation through thin layers, e.g. a scattering oxide or non-vertical mask edges. In this paper, benefits and drawbacks of some published models are discussed, and an improvement is suggested. Comparisons with results from Monte Carlo simulations and SIMS measurements are...
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