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A high maximum frequency of oscillation ($f_{\mathrm {{max}}}$ ) of 910 GHz was achieved at InAlAs/InGaAs high-electron mobility transistors (HEMTs) with a relatively long gate length ($L_{G}$ ) of 75 nm by adopting an asymmetric gate recess and a double-side-doped structure. The $f_{\mathrm {{max}}}$ improved significantly by extending the drain-side gate recess length ($L_{\mathrm {{RD}}}$ ...
We developed high-speed III-V devices for millimeter-wave receiver applications as InP-based high electron mobility transistors (HEMTs) that had a cavity structure and zero-bias GaAsSb-based heterojunction backward diodes. A high cutoff frequency fT) of 517 GHz and minimum noise figure (NFmin) of 0.71 dB at 94 GHz were achieved for the InP-based HEMTs, even after the passivation process, by adopting...
Highly sensitive p-GaAsSb/i-InAlAs/n-InGaAs backward diodes up to 170 GHz were achieved by adopting planar doping in the n-InGaAs layer. The planar doping is effective to control interband tunneling and junction capacitance (Cj) in the diodes. When doping concentration in the n-InGaAs layer was reduced to 1 × 1017 cm−3, backward-diode characteristics were obtained when planar doping was 2 × 1012 cm...
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