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The detection of a small number of molecules in miniature amount of solution is of pivotal significance in many applications including biomedicine, homeland security, forensics, and environmental protection. Surface-Enhanced Raman scattering (SERS) offers the potential for label-free sensing of many chemicals due to its unprecedented sensitivity and specificity. However, the performance of SERS sensing...
We experimentally demonstrate 2-D photonic crystal slab-coupled plasmonic nanocapsules for surface enhanced Raman spectroscopy (SERS). A strong Raman signal enhancement can be unambiguously detected even with a low concentration 10 nM dye molecules.
This study presents integrated circuit failure analysis (FA) results of reliability fail devices with high pin leakage (UHAST-“Unbiased Highly Accelerated Stress Test” and HTS-“High Temperature Storage”). FA reveals a crack along the STI (shallow trench isolation) sidewall and into Si crystallographic plane. Copper (Cu) was found by EDX analysis underneath Ni silicide layer and migrated into silicon...
An immunoassay based on surface-enhanced Raman scattering has been developed using diatom frustules to detect antigens with high sensitivity. It was found that the diatom frustules provide 6× higher sensitivity than traditional glass substrates.
The hybrid carbon nanostructures composed of an array of vertically aligned carbon nanotubes (CNTs) and a self-organized planar graphite layer (PGL) located on the top of the array (CNT-PGL nanostructures) have been obtained by the CVD method with the volatile catalyst. The fundamental characteristics (morphology, elemental composition and structure) of these nanostructures were characterized by Scanning...
Strained silicon germanium (sSiGe), as channel materials, has received a lot of attention due to its high hole mobility [1]–[4]. sSi/sSiGe/sSOI heterostructure substrate [5]–[8] takes the advantages of the tensile strained Si layer, and thus can increase the critical thickness for pseudomorphically grown SiGe with high Ge concentration. In this work, QW p-MOSFETs [9]–[11] on sSi/sSi0.5Ge0.5/sSOI substrate...
Gate-first integration of band-edge (BE) high-κ/metal gate nFET devices with dual stress liners and silicon-on-insulator substrates for the 45nm node and beyond is presented. We show the first reported demonstration of improved short channel control with high-κ/metal gates (HK/MG) enabled by the thinnest Tinv (≪12??) for BE nFET devices to-date, consistent with simulations showing the need for ≪14??...
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