Serwis Infona wykorzystuje pliki cookies (ciasteczka). Są to wartości tekstowe, zapamiętywane przez przeglądarkę na urządzeniu użytkownika. Nasz serwis ma dostęp do tych wartości oraz wykorzystuje je do zapamiętania danych dotyczących użytkownika, takich jak np. ustawienia (typu widok ekranu, wybór języka interfejsu), zapamiętanie zalogowania. Korzystanie z serwisu Infona oznacza zgodę na zapis informacji i ich wykorzystanie dla celów korzytania z serwisu. Więcej informacji można znaleźć w Polityce prywatności oraz Regulaminie serwisu. Zamknięcie tego okienka potwierdza zapoznanie się z informacją o plikach cookies, akceptację polityki prywatności i regulaminu oraz sposobu wykorzystywania plików cookies w serwisie. Możesz zmienić ustawienia obsługi cookies w swojej przeglądarce.
Surface effect and nonlocal effect are incorporated into classical Euler beam equation to study the static bending behavior of nanobridges. The generalized Young-Laplace equation and core-shell model are used to model the surface effect. The nonlocal effect is introduced in bending moment equation. Results show that a positive surface tension causes the nanobridge more difficult to bend while the...
Method of drain bias sweeping is reported to reduce the gate-induced drain leakage (GIDL) current but with other electrical parameters unaffected for p-type polycrystalline silicon thin-film transistors. It is proposed to be due to local electron trapping in the gate oxide near the drain after drain-bias sweeping such that the gate bias effect is screened. The effects of drain bias sweeping can be...
A unified FinFET reliability model including high K stack dynamic threshold (HKSDT), hot carrier injection (HCI), and negative bias temperature instability (NBTI) has been developed and verified by experimental data. The FinFET-based circuit performances are simulated and compared under these reliability issues by HSPICE simulator after the inclusion of the presented model.
A modeling study of dynamic threshold voltage in high K gate stack is reported in this paper. Both slow transient (STCE) and fast transient charging effect (FTCE) are included in this model. Finally, this model is applied in FinFET reliability and circuit performances are simulated. The result shows that, the drain circuit (Id) degradation in FinFET is much more obvious than normal MOSFETs with the...
Reliability of FinFETs is studied in this paper using the forward gated-diode generation-recombination (G-R) current. It is observed that the stress induced interface states result in the shift of the peak G-R current (??Ipeak) in the body current (Ib) versus gate voltage (Vg) characteristic, therefore the variation of interface states with stress time was calculated. In the hot carrier injection...
The influence of surface stress on the static and dynamic bending nanowires is investigated by incorporating the Young-Laplace equation into Euler-Bernoulli beam theory. The proposed theoretical approach gives explicit solutions for bending nanowires with two different boundary conditions - cantilever, and fixed-fixed. The solutions indicate that the nanowires behave as softer material for the cantilever...
Podaj zakres dat dla filtrowania wyświetlonych wyników. Możesz podać datę początkową, końcową lub obie daty. Daty możesz wpisać ręcznie lub wybrać za pomocą kalendarza.