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A new normally-on buried-oxide (BOX) trench-gate bipolar-mode JFET (BTB-JFET) is reported for high-frequency low-voltage low-power-loss dc/dc converter applications. The BOX structure of the device is realized by localized thermal oxidation at the bottom of the gate trench. The fabricated BTB-JFET has a breakdown voltage of 21 V at VGS = -3 V. Due to the BOX under the gate region, the gate-drain capacitance...
For the first time, power loss comparison between 20V-rated devices including a trench MOSFET and four kinds of trench-gate bipolar-mode JFETs (TB-JFETs) was carried out with the help of simulation based on static analysis and mixed-mode dynamic analysis using an inductive switching circuit. With at least 14% power loss improvement at 1 MHz and 19% at 2 MHz compared to that of the trench MOSFET, the...
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