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It is greatly important to accurately characterize the critical dimension (CD) and the roughness of line patterns in advanced lithography and etch process. Thus we wrote an offline roughness evaluation software and did lots of relevant researches. Two different edge finding algorithms are compared to reduce the CD uniformity. Power Spectral Density (PSD) algorithm is used to analyze the LER and LWR...
As we approach the advanced technology nodes, Multiple Patterning Lithography (MPL) helps achieve scaling down but still encounters a big challenge of lithographic performance because of the various pitches and orientations of features in 14nm logic design. The dose center shift issue is analyzed and solved in the Source Mask Optimization (SMO) stage in order to enlarge the overlapping process window...
Design and technology co-optimization (DTCO) is a new technology method, which takes the manufacturing process limitations, mainly lithography, into account during the early design stage. This paper demonstrates a DTCO workflow which includes layout generation, pattern analysis, hotspot library establishment and design rule optimization mainly. And the paper also gives an example about the method...
The mask three dimensional (M3D) effect of thin Opaque MoSi on Glass (OMOG) mask is analyzed by investigating the difference of diffraction orders between rigorous electro-magnetic field (EMF) simulation and thin mask approximation. Then the potential of extending the process window of AttPSM and OMOG masks with 22nm node SRAM cell patterns by using Optical Proximity Correction (OPC) and Source Mask...
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