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The field-plate (FP) technique for GaAs-based pseudomorphic high electron mobility transistors (pHEMTs) was discussed with various FP voltage, metal connection, and breakdown mechanism. In addition, these mechanisms of devices were also evaluated experimentally by their microwave and power performance. For breakdown voltage mechanism investigation, the design of experiment (DOE) with 16 transistors...
In this work, we have fabricated the first transparent gate using sputtered ITO/Au/ITO composite films InAlAs/InGaAs metamorphic HEMT (CTG-MHEMT) on GaAs substrate. The CTG-MHEMT has been demonstrated to increase front side optical coupling efficiency as an optoelectronic mixer. By optimizing the bias condition, the optoelectronic mixing efficiency can be enhanced. The photodetection mechanism of...
In this work, we perform AlGaN/GaN MOS-HEMT by using ZnO/Pr2O3 as gate dielectric. After 600??C annealing, the XRD analysis shows ZnO thin films with highly crystalline characteristics, which exhibit a lattice constant (a = 3.2498, c = 5.2066) matched to GaN (a = 3.1890, c = 5.1855). The gate leakage current can be improved significantly by inserting ZnO/Pr2O3 dielectric layer; meanwhile, ZnO/Pr2O...
AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors (MOS-HEMTs) using La2O3 as gate oxide by electron-beam evaporated have been investigated and compared with the regular HEMTs [1]. The La2O3 thin film achieved a good thermal stability after 200degC, 400degC and 600degC post-deposition annealing due to its high binding energy (835.7 eV) characteristics. Our measurements have shown...
In this study, we used the selective ring-region ion implantation technique to restrain the surface leakage current and to monitor the luminescence characteristics of InGaN/GaN multiple quantum-well blue light-emitting diodes (LEDs). The luminescence characteristics could be improved by varying the width of the highly resistive region of the current blocking area; and the leakage current also can...
Selective liquid phase oxidation of InGaAs using photoresist or metal as the mask is proposed, and the application of the InAlAs/InGaAs metal-oxide semiconductor metamorphic high-electron-mobility transistor (MOS-MHEMT) is also demonstrated. Without gate recessing, the gate oxide is obtained directly by oxidizing the InGaAs capping layer in a growth solution. Besides, the proposed process can simplify...
The oxidation of InAlAs and its application to InAlAs/InGaAs metal-oxide-semiconductor metamorphic high-electron mobility transistors (MOS-MHEMTs) are demonstrated in this study. After the highly selective gate recessing of InGaAs/InAlAs using citric buffer etchant, the gate dielectric is obtained directly by oxidizing the InAlAs layer in a liquid-phase solution at near room temperature. As compared...
The oxidation of InAlAs and its application to 0.65 mum InAlAs/InGaAs metal-oxide-semiconductor metamorphic high electron mobility transistors (MOS-MHEMTs) are demonstrated in this study. After the highly selective gate recessing of InGaAs/InAlAs using citric buffer etchant, the gate dielectric is obtained directly by oxidizing the InAlAs layer in a liquid phase solution near room temperature. As...
A liquid phase oxidation to grow native oxide film on InGaP near room temperature is investigated and characterized. The application as the surface passivation to improve the InGaP/GaAs heterojunction bipolar transistors (HBTs) performance is also demonstrated. In this work, the HBT devices with surface passivation by the native oxide exhibit 700% improvement in current gain at low collector current...
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